Abstract:The complex conductive behavior of ferroelectric domain walls is attracting more and more attention for their potential application as an independent nanoelectronic component. For the (001) epitaxial BiFeO3 films, we find that the domain wall conductivity varies among 71° domain walls, with tail-to-tail (T-T) domain walls more conductive than head-to-head (H-H) and head-to-tail (H-T) ones. Furthermore, it is observed that most of the conductive areas are composed of two parallel lines around the T-T domain walls. These experimental results can be well simulated by our theoretical model based on the polarization configuration and a tunneling mechanism. Our work will help to understand the mechanism of domain wall conductance in ferroelectric materials and further promote the usage of domain walls in advanced nano-devices.The complex conductive behavior of ferroelectric domain walls is attracting more and more attention for their potential application as an independent nanoelectronic component. For the (001) epitaxial BiFeO3 films, we find that the domain wall conductivity varies among 71° domain walls, with tail-to-tail (T-T) domain walls more conductive than head-to-head (H-H) and head-to-tail (H-T) ones. Furthermore, it is observed that most of the conductive areas are composed of two parallel lines around the T-T domain walls. These experimental results can be well simulated by our theoretical model based on the polarization configuration and a tunneling mechanism. Our work will help to understand the mechanism of domain wall conductance in ferroelectric materials and further promote the usage of domain walls in advanced nano-devices.

Controlled manipulation of conductive ferroelectric domain walls and nanoscale domains in BiFeO3 thin films

In-plane Charged Domain Walls with Memristive Behaviour in a Ferroelectric Film

Manipulation of Conductive Domain Walls in Confined Ferroelectric Nano-islands

Dynamics and Manipulation of Ferroelectric Domain Walls in Bismuth Ferrite Thin Films.

Giant Domain Wall Conductivity in Self‐Assembled BiFeO 3 Nanocrystals

In-Plane Ferroelectric Domain Wall Memory with Embedded Electrodes on LiNbO3 Thin Films.

Controlled Charging of Ferroelastic Domain Walls in Oxide Ferroelectrics

Conduction control at ferroic domain walls via external stimuli.

Controlled domain wall directions within nanodevices integrated on the surface of LiNbO3 single crystals

Topologically Protected Ferroelectric Domain Wall Memory with Large Readout Current

Hierarchical Domain Structure and Extremely Large Wall Current in Epitaxial BiFeO3 Thin Films

Ultrathin Non‐Ising Charged Domain Walls Confined in BiFeO3 Nanocrystals

Electric Field Writing of Ferroelectric Nano‐Domains Near 71° Domain Walls with Switchable Interfacial Conductivity

In-plane charged antiphase boundary and 180° domain wall in a ferroelectric film

Conductive Tail-to-tail Domain Walls in Epitaxial BiFeO3 Films

Ferroelectric Domain-Wall Logic Units

Temporary Formation of Highly Conducting Domain Walls for Non-Destructive Read-out of Ferroelectric Domain-Wall Resistance Switching Memories.

Domain wall functionality in BiFeO3

Interface Engineering Of Domain Structures In Bifeo3 Thin Films

Mechanical Manipulation of Nano‐Twinned Ferroelectric Domain Structures for Multilevel Data Storage

Atomic-Scale Domain Mediation in Nd-Doped BiFeO3 Film