Manipulation of Conductive Domain Walls in Confined Ferroelectric Nano-islands
Guo Tian,Wenda Yang,Xiao Song,Dongfeng Zheng,Luyong Zhang,Chao Chen,Peilian Li,Hua Fan,Junxiang Yao,Deyang Chen,Zhen Fan,Zhipeng Hou,Zhang,Sujuan Wu,Min Zeng,Xingsen Gao,Jun-Ming Liu
DOI: https://doi.org/10.1002/adfm.201807276
IF: 19
2019-01-01
Advanced Functional Materials
Abstract:Conductive ferroelectric domain walls-ultranarrow configurable conduction paths-have been considered as essential building blocks for future programmable domain wall electronics. For applications in high-density devices, it is imperative to explore the conductive domain walls in small confined systems, while earlier investigations have hitherto focused on thin films or bulk single. Here, an observation and manipulation of conductive domain walls confined within small BiFeO3 nanoislands aligned in high-density arrays are demonstrated. Using conductive atomic force microscopy, various types of conductive domain walls, including the head-to-head charged domain walls (CDWs), zigzag domain walls, and typical 71 degrees head-to-tail neutral domain walls (NDWs), are distinctly visualized. The CDWs exhibit remarkably enhanced metallic conductivity with current of approximate to nA order in magnitude and 10(4) times larger than that inside domains (0.01-0.1 pA), while the semiconducting NDWs allow much smaller current (approximate to 10 pA) than the CDWs. The substantial difference in conductivity for dissimilar walls enables manipulations of various wall conduction states for individual addressable nanoislands via electrical tuning of domain structures. A controllable writing of four distinctive states in individual nanoislands can be achieved, showing application potentials for developing multilevel high-density memories.