A likelihood inference of historical biogeography in the world's most diverse terrestrial vertebrate genus: diversification of direct-developing frogs (Craugastoridae: Pristimantis) across the Neotropics.

Á. Mendoza,Oscar E. Ospina,Heiber Cárdenas-Henao,J. C. Garcia-R

DOI: https://doi.org/10.1016/j.ympev.2015.02.001

IF: 5.019

2015-04-01

Molecular Phylogenetics and Evolution

Abstract:

What problem does this paper attempt to address?

In-plane Charged Domain Walls with Memristive Behaviour in a Ferroelectric Film

Zhongran Liu,Han Wang,Ming Li,Lingling Tao,Tula R. Paudel,Hongyang Yu,Yuxuan Wang,Siyuan Hong,Meng Zhang,Zhaohui Ren,Yanwu Xie,Evgeny Y. Tsymbal,Jingsheng Chen,Ze Zhang,He Tian

DOI: https://doi.org/10.1038/s41586-022-05503-5

IF: 64.8

2023-01-01

Nature

Abstract:Domain-wall nanoelectronics is considered to be a new paradigm for non-volatile memory and logic technologies in which domain walls, rather than domains, serve as an active element. Especially interesting are charged domain walls in ferroelectric structures, which have subnanometre thicknesses and exhibit non-trivial electronic and transport properties that are useful for various nanoelectronics applications(1-3). The ability to deterministically create and manipulate charged domain walls is essential to realize their functional properties in electronic devices. Here we report a strategy for the controllable creation and manipulation of in-plane charged domain walls in BiFeO3 ferroelectric films a few nanometres thick. By using an in situ biasing technique within a scanning transmission electron microscope, an unconventional layer-by-layer switching mechanism is detected in which ferroelectric domain growth occurs in the direction parallel to an applied electric field. Based on atomically resolved electron energy-loss spectroscopy, in situ charge mapping by in-line electron holography and theoretical calculations, we show that oxygen vacancies accumulating at the charged domain walls are responsible for the domain-wall stability and motion. Voltage control of the in-plane domain-wall position within a BiFeO3 film gives rise to multiple non-volatile resistance states, thus demonstrating the key functional property of being a memristor a few unit cells thick. These results promote a better understanding of ferroelectric switching behaviour and provide a new strategy for creating unit-cell-scale devices.
Conductions through head-to-head and tail-to-tail domain walls in LiNbO3 nanodevices

Xiaojie Chai,Jianwei Lian,Chao Wang,Xiaobing Hu,Jie Sun,Jun Jiang,Anquan Jiang

DOI: https://doi.org/10.1016/j.jallcom.2021.159837

IF: 6.2

2021-08-01

Journal of Alloys and Compounds

Abstract:Conducting domain walls in an insulating ferroelectric matrix are interesting for the development of next generation multifunctional nanodevices with large output powers. However, electrical conductions are diversified among head-to-head (H-H), neutral (N), and tail-to-tail (T-T) domain walls (DWs) with disputable conduction mechanisms. It is generally accepted that the charged DWs are more electrically conductive than the neutral DWs. However, the charged walls are unstable due to high depolarization energies. Here, we stabilized the H-H DWs, NDWs and T-T DWs within a LiNbO3 transistor by controlling charge injection in compensation of the domain boundary charge under applied drain–gate, drain–source and gate–source voltages. The walls were created through the local 180° domain reversals in different inclined angles, and the transistors in different sizes were fabricated at the surfaces of 5 mol.% MgO-doped LiNbO3 single crystals in monodomain patterns. The NDWs are positively charged due to small inclination angles (~1°) and local sideways meandering behavior of the charged dipoles with electrical conduction that is three orders of magnitude higher than that across the T-T DWs but is one order of magnitude lower than that across the H-H DWs. Voltage dependences of wall currents can be fitted according to the space-charge-limited current equation with an exponential coefficient varying between 2.1 and 3.7 in some specific voltage ranges, implying discontinuous domain retraction in different inclined wall angles against the reduced applied voltage to affect the wall current. This finding provides the fundamental physics to improve domain wall conduction via domain reconstruction and broadens the domain wall application in future nano-devices.

materials science, multidisciplinary,chemistry, physical,metallurgy & metallurgical engineering
Manipulation of Conductive Domain Walls in Confined Ferroelectric Nanoislands

Guo Tian,Wenda Yang,Xiao Song,Dongfeng Zheng,Luyong Zhang,Chao Chen,Peilian Li,Hua Fan,Junxiang Yao,Deyang Chen,Zhen Fan,Zhipeng Hou,Zhang,Sujuan Wu,Min Zeng,Xingsen Gao,Jun-Ming Liu

DOI: https://doi.org/10.1002/adfm.201807276

IF: 19

2019-01-01

Advanced Functional Materials

Abstract:Conductive ferroelectric domain walls-ultranarrow configurable conduction paths-have been considered as essential building blocks for future programmable domain wall electronics. For applications in high-density devices, it is imperative to explore the conductive domain walls in small confined systems, while earlier investigations have hitherto focused on thin films or bulk single. Here, an observation and manipulation of conductive domain walls confined within small BiFeO3 nanoislands aligned in high-density arrays are demonstrated. Using conductive atomic force microscopy, various types of conductive domain walls, including the head-to-head charged domain walls (CDWs), zigzag domain walls, and typical 71 degrees head-to-tail neutral domain walls (NDWs), are distinctly visualized. The CDWs exhibit remarkably enhanced metallic conductivity with current of approximate to nA order in magnitude and 10(4) times larger than that inside domains (0.01-0.1 pA), while the semiconducting NDWs allow much smaller current (approximate to 10 pA) than the CDWs. The substantial difference in conductivity for dissimilar walls enables manipulations of various wall conduction states for individual addressable nanoislands via electrical tuning of domain structures. A controllable writing of four distinctive states in individual nanoislands can be achieved, showing application potentials for developing multilevel high-density memories.
In-Plane Ferroelectric Domain Wall Memory with Embedded Electrodes on LiNbO3 Thin Films.

Meng Han Ao,Zheng,Qi Lan Zhong,Wen Di Zhang,Xu Hou,Xiao Jie Chai,Chao Wang,Hao Chen Fan,Jian Wei Lian,Yan Cheng,Jie Wang,Jun Jiang,An Quan Jiang

DOI: https://doi.org/10.1021/acsami.1c08022

IF: 9.5

2021-01-01

ACS Applied Materials & Interfaces

Abstract:With the formation of mesa-like cells at their surfaces, LiNbO3 thin films are useful for integrating high-density domain wall memory. However, the material is too hard and inert to etch the cells with inclined side edges that help to diminish polarization retention. Moreover, etching could damage the ferroelectricity of the film. To overcome these drawbacks in forming memory cells directly, we developed a technique to deposit two gapped electrodes in the film surface, without needing to etch the film. While applying an in-plane write voltage above a coercive voltage, the domain within the gap is reversibly switched along with the creation/erasure of conducting domain walls against the peripheral unswitched domain. This technique enables "on"/"off" current read of the written information. Unfortunately, the switched domain within the gap generally has poor retention and a weak wall current arises from the presence of a strong depolarization field. To overcome this problem, we fabricated a type of embedded electrode that diffuses thickness-wise into the LiNbO3 thin film to form a parallel-plate-like structure to screen the depolarization field. The switched domains now had good retention and carry large wall currents. Alternatively, without the embedded electrodes, the switched domains within the cells can be stabilized with increasing gap distance above a critical length of 320 nm. The two methods foreshadow the possibility in the future to fabricate damage-free LiNbO3 memory cells without etching.
Controlled manipulation of conductive ferroelectric domain walls and nanoscale domains in BiFeO3 thin films

Dongfeng Zheng,Guo Tian,Yadong Wang,Wenda Yang,Luyong Zhang,Zoufei Chen,Zhen Fan,Deyang Chen,Zhipeng Hou,Xingsen Gao,Qiliang Li,Jun-Ming Liu

DOI: https://doi.org/10.1016/j.jmat.2021.10.003

IF: 8.589

2022-03-01

Journal of Materiomics

Abstract:Recently, there is a surge of research interest in configurable ferroelectric conductive domain walls which have been considered as possible fundamental building blocks for future electronic devices. In this work, by using piezoresponse force microscopy and conductive atomic force microscopy, we demonstrated the controlled manipulation of various conductive domain walls in epitaxial BiFeO3 thin films, e.g. neutral domain walls (NDW) and charged domain walls (CDWs). More interestingly, a specific type of nanoscale domains was also identified, which are surrounded by highly conductive circular CWDs. Similar nanoscale domains can also be controlled created and erasured by applying local field via conductive probe, which allow nondestructive current readout of different domain states with a large on/off resistance ratio up to 102. The results indicate the potential to design and develop high-density non-volatile ferroelectric memories by utilizing these programable conductive nanoscale domain walls.

materials science, multidisciplinary,chemistry, physical,physics, applied
Fabrication of Conductive Domain Walls in X-Cut Congruent Thin-film Lithium Niobate Using an Electrical-field Poling Technique（Invited）

Su Yawen,Chen Haiwei,Zhao Mengwei,Niu Yunfei,Li Chen,Zhang Yong,Yang Shaoguang,Zhu Shining,Hu Xiaopeng

DOI: https://doi.org/10.3788/lop240952

2024-01-01

Laser & Optoelectronics Progress

Abstract:Conductive ferroelectric domain walls have attracted increasing research interest in the field of nanoelectronics, and the fabrication technique for such domain walls is vital. In this study, we investigated in detail the fabrication of conductive domain walls in x-cut congruent thin-film lithium niobate（TFLN） using an electrical-field poling technique. The ferroelectric domain structures can be controlled through the applied electrical field and applied pulse numbers, and the domain inversion process is related to the conduction characteristics of the domain walls. The domain structures in TFLN are revealed using confocal second-harmonic microscopy and piezoresponse force microscopy. The results provide further directions for the development and application of conductive domain walls in TFLN.
Domain Wall Geometry Controls Conduction in Ferroelectrics.

R. K. Vasudevan,A. N. Morozovska,E. A. Eliseev,J. Britson,J. -C. Yang,Y. -H. Chu,P. Maksymovych,L. Q. Chen,V. Nagarajan,S. V. Kalinin

DOI: https://doi.org/10.1021/nl302382k

IF: 10.8

2012-01-01

Nano Letters

Abstract:A new paradigm of domain wall. nanoelectronics has emerged recently, in which the domain wall in a ferroic is itself an active device element The ability to spatially. modulate the ferroic order parameter within a single domain wall allows the physical properties to be tailored at will and hence opens vastly unexplored device possibilities: Here, we demonstrate via ambient and ultrahigh-vacuum (UHV) scanning probe microscopy (SPM) measurements in bismuth ferrite that the conductivity of the domain walls can be modulated by up to 500% in the spatial dimension as a function of domain wall curvature. Landau-Ginzburg-Devonshire calculations reveal the conduction is a.. result of carriers or vacancies migrating to neutralize the charge at the farmed interface. Phase field modeling indicates that anisotropic potential distributions can occur even for initially uncharged walls, from polarization dynamics mediated by elastic effects. These results are the first proof of concept for modulation of charge as a function of domain wall geometry by a proximal probe, thereby expanding potential applications for oxide ferroics in future nanoscale electronics.
Strain-tunable Magnetism at Oxide Domain Walls

D. V. Christensen,Y. Frenkel,Y. Z. Chen,Y. W. Xie,Z. Y. Chen,Y. Hikita,A. Smith,L. Klein,H. Y. Hwang,N. Pryds,B. Kalisky

DOI: https://doi.org/10.1038/s41567-018-0363-x

IF: 19.684

2018-01-01

Nature Physics

Abstract:Applying stress to a ferroelastic material results in a nonlinear strain response as domains of different orientations mechanically switch. The ability to write, erase and move domain walls between such ferroelastic domains suggests a method for making nanoelectronics where the domain wall is the device. However, little is known about the magnetic properties of such domain walls. A fascinating model system is SrTiO 3 , where the ferroelastic domain walls display strain-tunable polarity and enhanced conductivity. Here, we reveal a long-range magnetic order with modulations along the ferroelastic domain walls in SrTiO 3 and SrTiO 3 -based heterointerfaces, which manifests itself as a striped pattern in scanning superconducting quantum interference device maps of the magnetic landscape. In conducting interfaces, the magnetism is coupled to itinerant electrons with clear signatures in magnetotransport measurements. The magnetic state is also coupled dynamically to the lattice and can be reversibly tuned by applying local external forces. This study raises the possibility of designing nanoscale devices based on domain walls where strain-tunable ferroelectric, ferroelastic and ferromagnetic orders may coexist.
Conduction control at ferroic domain walls via external stimuli.

J C Yang,C H Yeh,Y T Chen,S C Liao,R Huang,H J Liu,C C Hung,S H Chen,S L Wu,C H Lai,Y P Chiu,P W Chiu,Y H Chu

DOI: https://doi.org/10.1039/c4nr03300k

IF: 6.7

2014-01-01

Nanoscale

Abstract:Intriguing functionalities at nano-sized domain walls have recently spawned a new paradigmfor developing novel nanoelectronics due to versatile characteristics. In this study, we explore a new scenario to modulate the local conduction of ferroic domain walls. Three controlling parameters, i.e., external electrical field, magnetic field and light, are introduced to the 90 degrees domain walls (90 degrees DWs) of BiFeO3. Electrical modulation is realized by electrical transport, where the mobility of 90 degrees DWs can be altered by gating voltage. We further use the ferromagnetic/antiferromagnetic coupling to reveal the inherent magnetism at the DWs. With an established magnetic nature, magneto-transport has been conducted to introduce magnetic controlling parameter, where a giant positive magnetoresistance change can be observed up to 200%. In addition, light modulated conduction, a core factor for multifunctional applications, is successfully demonstrated (current enhancement by a factor of 2 with 11 W white lamp). These results offer new insights to discover the tunability of domain wall nanoelectronics.
Microwave A.c. Conductivity of Domain Walls in Ferroelectric Thin Films.

Alexander Tselev,Pu Yu,Ye Cao,Liv R. Dedon,Lane W. Martin,Sergei V. Kalinin,Petro Maksymovych

DOI: https://doi.org/10.1038/ncomms11630

IF: 16.6

2016-01-01

Nature Communications

Abstract:Ferroelectric domain walls are of great interest as elementary building blocks for future electronic devices due to their intrinsic few-nanometre width, multifunctional properties and field-controlled topology. To realize the electronic functions, domain walls are required to be electrically conducting and addressable non-destructively. However, these properties have been elusive because conducting walls have to be electrically charged, which makes them unstable and uncommon in ferroelectric materials. Here we reveal that spontaneous and recorded domain walls in thin films of lead zirconate and bismuth ferrite exhibit large conductance at microwave frequencies despite being insulating at d.c. We explain this effect by morphological roughening of the walls and local charges induced by disorder with the overall charge neutrality. a.c. conduction is immune to large contact resistance enabling completely non-destructive walls read-out. This demonstrates a technological potential for harnessing a.c. conduction for oxide electronics and other materials with poor d.c. conduction, particularly at the nanoscale.
Field Enhancement of Electronic Conductance at Ferroelectric Domain Walls

Rama K. Vasudevan,Ye Cao,Nouamane Laanait,Anton Ievlev,Linglong Li,Jan-Chi Yang,Ying-Hao Chu,Long-Qing Chen,Sergei V. Kalinin,Petro Maksymovych

DOI: https://doi.org/10.1038/s41467-017-01334-5

IF: 16.6

2017-01-01

Nature Communications

Abstract:Ferroelectric domain walls have continued to attract widespread attention due to both the novelty of the phenomena observed and the ability to reliably pattern them in nanoscale dimensions. However, the conductivity mechanisms remain in debate, particularly around nominally uncharged walls. Here, we posit a conduction mechanism relying on field-modification effect from polarization re-orientation and the structure of the reverse-domain nucleus. Through conductive atomic force microscopy measurements on an ultra-thin (001) BiFeO3 thin film, in combination with phase-field simulations, we show that the field-induced twisted domain nucleus formed at domain walls results in local-field enhancement around the region of the atomic force microscope tip. In conjunction with slight barrier lowering, these two effects are sufficient to explain the observed emission current distribution. These results suggest that different electronic properties at domain walls are not necessary to observe localized enhancement in domain wall currents.
Electric Field Control of Multiferroic Domain Wall Motion

Hong-Bo Chen,Ye-Hua Liu,You-Quan Li

DOI: https://doi.org/10.1063/1.4870711

IF: 2.877

2014-01-01

Journal of Applied Physics

Abstract:The dynamics of a multiferroic domain wall in which an electric field can couple to the magnetization via inhomogeneous magnetoelectric interaction is investigated by the collective-coordinate framework. We show how the electric field is capable of delaying the onset of the Walker breakdown of the domain wall motion, leading to a significant enhancement of the maximum wall velocity. Moreover, we show that in the stationary regime the chirality of the domain wall can be efficiently reversed when the electric field is applied along the direction of the magnetic field. These characteristics suggest that the multiferroic domain wall may provide a new prospective means to design faster and low-power-consumption domain wall devices.
Imaging and tuning polarity at SrTiO 3 domain walls

Yiftach Frenkel,Noam Haham,Yishai Shperber,Christopher Bell,Yanwu Xie,Zhuoyu Chen,Yasuyuki Hikita,Harold Y. Hwang,Ekhard K. H. Salje,Beena Kalisky

DOI: https://doi.org/10.1038/nmat4966

IF: 41.2

2017-01-01

Nature Materials

Abstract:Electrostatic fields tune the ground state of interfaces between complex oxide materials. Electronic properties, such as conductivity and superconductivity, can be tuned and then used to create and control circuit elements and gate-defined devices. Here we show that naturally occurring twin boundaries, with properties that are different from their surrounding bulk, can tune the LaAlO 3 /SrTiO 3 interface 2DEG at the nanoscale. In particular, SrTiO 3 domain boundaries have the unusual distinction of remaining highly mobile down to low temperatures, and were recently suggested to be polar. Here we apply localized pressure to an individual SrTiO 3 twin boundary and detect a change in LaAlO 3 /SrTiO 3 interface current distribution. Our data directly confirm the existence of polarity at the twin boundaries, and demonstrate that they can serve as effective tunable gates. As the location of SrTiO 3 domain walls can be controlled using external field stimuli, our findings suggest a novel approach to manipulate SrTiO 3 -based devices on the nanoscale.
Controlled domain wall directions within nanodevices integrated on the surface of LiNbO3 single crystals

Jie Sun,Chao Wang,Jun Jiang,A. Jiang

DOI: https://doi.org/10.1109/ASICON52560.2021.9620490

2021-10-26

Abstract:Binary data in 1T1C and 2T2C non-volatile ferroelectric random access memories are represented by the switching and non-switching polarization charges based on a perovskite ferroelectric capacitor. However, downscaling of the cell dimensions reduces the amount of measurable polarization charges, thus the charge difference is no longer detected reliably in high-density memories. Erasable conductive nanosized domain walls (CDWs) in ferroelectrics can relieve the bottleneck of traditional ferroelectric memories. The binary ON-OFF states of the device accompany the creation and erasure of conductive walls between two antiparallel and parallel domains. Although many efforts have been contributed to the studies of the precise physical mechanism of domain wall conductivity and the fabrication process, there remain several challenges before its commercialization, among which how to increase the DW current density and to reduce the coercive voltage is critical. Here we show the route to arbitrarily control the conductive DW paths within the LiNbO3 nanodevices and the method to align the nanodevice against the polarization direction for the achievements of the best polarization retention and the minimum coercive field. In addition, a method to magnify the domain wall current by 3 times through the polarization alignment within the nanodevice has been demonstrated.

Engineering,Materials Science,Computer Science,Physics
Dynamics and Manipulation of Ferroelectric Domain Walls in Bismuth Ferrite Thin Films.

Shuyu Xiao,Yaming Jin,Xiaomei Lu,Sang-Wook Cheong,Jiangyu Li,Yang Li,Fengzhen Huang,Jinsong Zhu

DOI: https://doi.org/10.1093/nsr/nwz176

2019-01-01

Abstract:Abstract Ferroelectric domain walls differ from domains not only in their crystalline and discrete symmetry, but also in their electronic, magnetic, and mechanical properties. Although domain walls provide a degree of freedom to regulate the physical properties at the nanoscale, the relatively lower controllability prevents their practical applications in nano-devices. In this work, with the advantages of 3D domain configuration detection based on piezoresponse force microscopy, we find that the mobility of three types of domain walls (tail-to-tail, head-to-tail, head-to-head) in (001) BiFeO3 films varies with the applied electrical field. Under low voltages, head-to-tail domain walls are more mobile than other domain walls, while, under high voltages, tail-to-tail domain walls become rather active and possess relatively long average lengths. This is due to the high nucleation energy and relatively low growth energy for charged domain walls. Finally, we demonstrate the manipulation of domain walls through successive electric writings, resulting in well-aligned conduction paths as designed, paving the way for their application in advanced spintronic, memory and communication nano-devices.
Large and accessible conductivity of charged domain walls in lithium niobate

Christoph S Werner,Simon J Herr,Karsten Buse,Boris Sturman,Elisabeth Soergel,Cina Razzaghi,Ingo Breunig

DOI: https://doi.org/10.1038/s41598-017-09703-2

2017-08-29

Abstract:Ferroelectric domain walls are interfaces between areas of a material that exhibits different directions of spontaneous polarization. The properties of domain walls can be very different from those of the undisturbed material. Metallic-like conductivity of charged domain walls (CDWs) in nominally insulating ferroelectrics was predicted in 1973 and detected recently. This important effect is still in its infancy: The electric currents are still smaller than expected, the access to the conductivity at CDWs is hampered by contact barriers, and stability is low because of sophisticated domain structures or proximity of the Curie point. Here, we report on large, accessible, and stable conductivity at CDWs in lithium niobate (LN) crystals - a vital material for photonics. Our results mark a breakthrough: Increase of conductivity at CDWs by more than 13 orders of magnitude compared to that of the bulk, access to the effect via ohmic and diode-like contacts, and high stability for temperatures T ≤ 70 °C are demonstrated. A promising and now realistic prospect is to combine CDW functionalities with linear and nonlinear optical phenomena. Our findings allow new generations of adaptive-optical elements, of electrically controlled integrated-optical chips for quantum photonics, and of advanced LN-semiconductor hybrid optoelectronic devices.
Ferroelectric Domain-Wall Logic Units

Jing Wang,Jing Ma,Houbing Huang,Ji Ma,Hasnain Mehdi Jafri,Yuanyuan Fan,Huayu Yang,Yue Wang,Mingfeng Chen,Di Liu,Jinxing Zhang,Yuan-Hua Lin,Long-Qing Chen,Di Yi,Ce-Wen Nan

DOI: https://doi.org/10.1038/s41467-022-30983-4

IF: 16.6

2022-01-01

Nature Communications

Abstract:The electronic conductivities of ferroelectric domain walls have been extensively explored over the past decade for potential nanoelectronic applications. However, the realization of logic devices based on ferroelectric domain walls requires reliable and flexible control of the domain-wall configuration and conduction path. Here, we demonstrate electric-field-controlled stable and repeatable on-and-off switching of conductive domain walls within topologically confined vertex domains naturally formed in self-assembled ferroelectric nano-islands. Using a combination of piezoresponse force microscopy, conductive atomic force microscopy, and phase-field simulations, we show that on-off switching is accomplished through reversible transformations between charged and neutral domain walls via electric-field-controlled domain-wall reconfiguration. By analogy to logic processing, we propose programmable logic gates (such as NOT, OR, AND and their derivatives) and logic circuits (such as fan-out) based on reconfigurable conductive domain walls. Our work might provide a potentially viable platform for programmable all-electric logic based on a ferroelectric domain-wall network with low energy consumption.
Mechanical strain modulation of domain wall currents across LiNbO3 nanosensors

Xiaobing Hu,Sizheng Zheng,Wendi Zhang,Wenjie Zhang,Jie Wang,Jun Jiang,Anquan Jiang

DOI: https://doi.org/10.1016/j.ceramint.2022.05.313

IF: 5.532

2022-09-15

Ceramics International

Abstract:Recently, studies on low-dimensional conducting domain walls (DWs) in insulating ferroelectrics have opened up new research areas that allow information to be mechanically written and electrically read on the nanoscale. Large strains in thin films can change the polarization gradient across the DW region and thus increasing the DW current significantly. This phenomenon can enable the development of high sensitivity mechanical vibration sensors. In this study, the effects of variable uniaxial strain on the structures of 180° conducting DWs in LiNbO3 (LNO) single-crystal thin films bonded onto Si/SiO2 substrates were investigated. After the creation of antiparallel domains within each LNO nanosensor integrated at the film surface, strain modulation of DW currents was observed through simple mechanical bending of the film. The DW current increases under application of tensile strain along the axis of polarization, but decreases under application of in-plane compression by a factor of approximately 25. Phase field simulations showed the dramatic change in polarization gradients around the DW regions under the increase in tensile strain, which reduced the band gap. Repetitive band-gap narrowing/broadening with change in local electric field intensity under vibrating mechanical forces can periodically modulate both the carrier density and the DW conduction in the sensors. This finding not only provides the new fundamental physics to enrich the ferroelectric theory, but also paves the way to the near-future development of bending actuators, piezolighters, and micro-/nano-manipulators, etc.

materials science, ceramics
Electric Field Writing of Ferroelectric Nano‐Domains Near 71° Domain Walls with Switchable Interfacial Conductivity

Shuzhen Yang,Ren-Ci Peng,Qing He,Yen-Lin Huang,Yijing Huang,Jan-Chi Yang,Tianzhe Chen,Jingwen Guo,Long-Qing Chen,Ying-Hao Chu,Ce-Wen Nan,Pu Yu

DOI: https://doi.org/10.1002/andp.201800130

2018-01-01

Annalen der Physik

Abstract:Conducting ferroelectric domain walls attract a wide range of research interest due to their promising applications in nanoelectronics. In this study, we reveal an unexpected enhanced conductivity near the well-aligned 71 degrees nonpolar domain walls in BiFeO3. Such an interfacial conductivity is induced by the creation of up-polarized nano-domains near the 71 degrees domain walls, as revealed by the combination of the piezo-response force microscopy (PFM) and conducting atomic force microscopy (c-AFM) imaging techniques, as well as phase-field simulations. The upward polarized domains are suggested to lower the Schottky barrier at the interface between the tip and sample surface, and then give rise to the enhanced interfacial conductivity. The result provides a new strategy to tune the local conductance in ferroelectric materials and opens up new opportunities to design novel nanoelectronic devices.
Low-Voltage Domain-Wall LiNbO3 Memristors

P Chaudhary,H Lu,A Lipatov,Z Ahmadi,J P V McConville,A Sokolov,J E Shield,A Sinitskii,J M Gregg,A Gruverman

DOI: https://doi.org/10.1021/acs.nanolett.0c01836

2020-08-12

Abstract:Application of conducting ferroelectric domain walls (DWs) as functional elements may facilitate development of conceptually new resistive switching devices. In a conventional approach, several orders of magnitude change in resistance can be achieved by controlling the DW density using supercoercive voltage. However, a deleterious characteristic of this approach is high-energy cost of polarization reversal due to high leakage current. Here, we demonstrate a new approach based on tuning the conductivity of DWs themselves rather than on domain rearrangement. Using LiNbO3 capacitors with graphene, we show that resistance of a device set to a polydomain state can be continuously tuned by application of subcoercive voltage. The tuning mechanism is based on the reversible transition between the conducting and insulating states of DWs. The developed approach allows an energy-efficient control of resistance without the need for domain structure modification. The developed memristive devices are promising for multilevel memories and neuromorphic computing applications.

A likelihood inference of historical biogeography in the world's most diverse terrestrial vertebrate genus: diversification of direct-developing frogs (Craugastoridae: Pristimantis) across the Neotropics.

In-plane Charged Domain Walls with Memristive Behaviour in a Ferroelectric Film

Conductions through head-to-head and tail-to-tail domain walls in LiNbO3 nanodevices

Manipulation of Conductive Domain Walls in Confined Ferroelectric Nanoislands

In-Plane Ferroelectric Domain Wall Memory with Embedded Electrodes on LiNbO3 Thin Films.

Controlled manipulation of conductive ferroelectric domain walls and nanoscale domains in BiFeO3 thin films

Fabrication of Conductive Domain Walls in X-Cut Congruent Thin-film Lithium Niobate Using an Electrical-field Poling Technique（Invited）

Domain Wall Geometry Controls Conduction in Ferroelectrics.

Strain-tunable Magnetism at Oxide Domain Walls

Conduction control at ferroic domain walls via external stimuli.

Microwave A.c. Conductivity of Domain Walls in Ferroelectric Thin Films.

Field Enhancement of Electronic Conductance at Ferroelectric Domain Walls

Electric Field Control of Multiferroic Domain Wall Motion

Imaging and tuning polarity at SrTiO 3 domain walls

Controlled domain wall directions within nanodevices integrated on the surface of LiNbO3 single crystals

Dynamics and Manipulation of Ferroelectric Domain Walls in Bismuth Ferrite Thin Films.

Large and accessible conductivity of charged domain walls in lithium niobate

Ferroelectric Domain-Wall Logic Units

Mechanical strain modulation of domain wall currents across LiNbO3 nanosensors

Electric Field Writing of Ferroelectric Nano‐Domains Near 71° Domain Walls with Switchable Interfacial Conductivity

Low-Voltage Domain-Wall LiNbO3 Memristors