Abstract:Domain-wall nanoelectronics is considered to be a new paradigm for non-volatile memory and logic technologies in which domain walls, rather than domains, serve as an active element. Especially interesting are charged domain walls in ferroelectric structures, which have subnanometre thicknesses and exhibit non-trivial electronic and transport properties that are useful for various nanoelectronics applications(1-3). The ability to deterministically create and manipulate charged domain walls is essential to realize their functional properties in electronic devices. Here we report a strategy for the controllable creation and manipulation of in-plane charged domain walls in BiFeO3 ferroelectric films a few nanometres thick. By using an in situ biasing technique within a scanning transmission electron microscope, an unconventional layer-by-layer switching mechanism is detected in which ferroelectric domain growth occurs in the direction parallel to an applied electric field. Based on atomically resolved electron energy-loss spectroscopy, in situ charge mapping by in-line electron holography and theoretical calculations, we show that oxygen vacancies accumulating at the charged domain walls are responsible for the domain-wall stability and motion. Voltage control of the in-plane domain-wall position within a BiFeO3 film gives rise to multiple non-volatile resistance states, thus demonstrating the key functional property of being a memristor a few unit cells thick. These results promote a better understanding of ferroelectric switching behaviour and provide a new strategy for creating unit-cell-scale devices.

Energy Efficient All-Electric-Field-Controlled Multiferroic Magnetic Domain-Wall Logic

Electric Field Control of Multiferroic Domain Wall Motion

Electric field control of domain wall logic in piezoelec-tric/ferromagnetic nanodevices

Ferroelectric Domain-Wall Logic Units

In-plane Charged Domain Walls with Memristive Behaviour in a Ferroelectric Film

Optoelectronic Domain-Wall Motion for Logic Computing

Current-driven Magnetic Domain-Wall Logic

Towards fully electrically controlled domain-wall logic

Strain-driven magnetic domain wall dynamics controlled by voltage in multiferroic heterostructures

All‐Electrical Programmable Domain‐Wall Spin Logic‐In‐Memory Device

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Prototype Design of a Domain-Wall-Based Magnetic Memory Using a Single Layer La0.67Sr0.33MnO3 Thin Film.

Energy-Efficient Domain-Wall Motion Governed by the Interplay of Helicity-Dependent Optical Effect and Spin-Orbit Torque

Conduction control at ferroic domain walls via external stimuli.

Topologically Protected Ferroelectric Domain Wall Memory with Large Readout Current

Experimental demonstration of domain wall logic-in-memory through helicity-dependent optical effect and spin-orbit torque.

Charged ferroelectric domain walls for deterministic a.c. signal control

Programmable Dynamics of Exchange‐Biased Domain Wall via Spin‐Current‐Induced Antiferromagnet Switching

Magnetic Domain Wall Engineering in a Nanoscale Permalloy Junction

Magnetic Domain Wall Transfer Via Graphene Mediated Electrostatic Control

A Ferroelectric Domain-Wall Transistor