Abstract:Atomically thin Bi2O2Se has been recently synthesized, and it possesses ultrahigh mobility (Nat. Nanotechnol. 2017, 12, 530; Nano Lett. 2017, 17, 3021). Herein, we show first-principles evidence that Bi2O2Se and a related class of bismuth oxychalcogenides, such as Bi2O2S and Bi2O2Te, not only are novel semiconductors with ultrahigh mobility but also possess previously unreported ferroelectricity/ferroelasticity. Such a unique combination of semiconducting with ferroelectric/ferroelastic properties enables bismuth oxychalcogenides to potentially meet a great challenge, that is, integration of room-temperature functional nonvolatile memories into future nanocircuits. Specifically, we predict that bulk Bi2O2S is both ferroelastic and antiferroelectric and that a thin film with odd number of layers can even be multiferroic with nonzero in-plane polarization, and this polarization can be switchable via ferroelasticity. Moreover, Bi2O2Te possesses intrinsic out-of-plane ferroelectricity, while Bi2O2Se possesses piezoelectricity and ferroelectricity upon an in-plane strain. The in-plane strain on Bi2O2Se can induce giant polarizations (56.1 μC/cm2 upon 4.1% strain) with the piezoelectric coefficient being about 35 times higher than that of MoS2 monolayer. The in-plane strain can also enhance the bandgap or even convert indirect to direct bandgap beyond a critical value. The good match among the lattice constants of bismuth oxychalcogenides is also desirable, rendering the epitaxial growth of heterostructure devices free of fabrication issues related to lattice mismatch, thereby allowing high-quality bismuth oxychalcogenide heterostructures tailored by design for a variety of applications.

Two-dimensional ferroelectricity in a single-element bismuth monolayer

Direct observation of room-temperature out-of-plane ferroelectricity and tunneling electroresistance at the two-dimensional limit

Continuously tunable ferroelectric domain width down to the single-atomic limit in bismuth tellurite

Lone-pair activated ferroelectricity and stable charged domain wall in Bi monolayer

Ferroelectricity in 2D Elemental Materials

Elemental Semimetal Ferroelectricity in Buckled Carbon Monolayers: Implications for Flexible Field-Effect Transistors

Topological interfacial states in ferroelectric domain walls of two-dimensional bismuth

Ferroelectricity and Antiferroelectricity in Elemental Group-V Monolayer Materials

Size Limiting Elemental Ferroelectricity in Bi Nanoribbons: Observation, Mechanism, and Opportunity

Generation of out-of-plane ferroelectric behavior in a one-atom-thick monolayer

Switchable band topology and geometric current in sliding bilayer elemental ferroelectric

Ferroelectricity in layered bismuth oxide down to 1 nanometer

Giant electromechanical response in layered ferroelectrics enabled by asymmetric ferroelastic switching

Out-of-plane ferroelectricity and multiferroicity in elemental bilayer phosphorene, arsenene, and antimonene

Mechano-ferroelectric coupling: stabilization enhancement and polarization switching in bent AgBiP2Se6 monolayers

Giant Ferroelectric Polarization in Ultrathin Ferroelectrics Via Boundary-Condition Engineering

Elemental Ferroelectric Topological Insulator in $ψ$-bismuthene

Toggling Valley-Spin Locking and Nonlinear Optical Properties of Single-Element Multiferroic Monolayers via Light

Elemental ferroelectric topological insulator in ψ-bismuthene

Bismuth Oxychalcogenides: A New Class of Ferroelectric/Ferroelastic Materials with Ultra High Mobility

Electrical and Mechanical Switching of Ferroelectric Polarization in the 70 Nm Bifeo3 Film