Switchable band topology and geometric current in sliding bilayer elemental ferroelectric

Zhuang Qian,Zhihao Gong,Jian Li,Hua Wang,Shi Liu

2023-12-04

Abstract:We demonstrate that sliding motion between two layers of the newly discovered ferroelectric and topologically trivial bismuth (Bi) monolayer [Nature 617, 67 (2023)] can induce a sequence of topological phase transitions, alternating between trivial and nontrivial states. Interestingly, a lateral shift, even when preserving spatial symmetry, can still switch the quantum spin Hall state on and off. The substantial band-gap modulation and band inversion due to interlayer sliding arise primarily from the intralayer in-plane charge transfer processes involving Bi atoms at the outermost atomic layers, rather than the interlayer charge redistribution. We map out the topological phase diagram and the geometric Berry curvature-dipole induced nonlinear anomalous Hall response resulting from sliding, highlighting the potential for robust mechanical control over the edge current and the Hall current. Bilayer configurations that are $\mathbb{Z}_2$ nontrivial can produce drastically different transverse currents orthogonal to the external electric field. This occurs because both the direction and magnitude of the Berry curvature dipole at the Fermi level depend sensitively on the sliding displacement. Our results suggest that bilayer bismuth could serve as a platform to realize power-efficient ``Berry slidetronics" for topology memory applications.

Computational Physics,Mesoscale and Nanoscale Physics,Materials Science

What problem does this paper attempt to address?

The paper primarily explores a series of topological phase transition phenomena induced by the sliding motion in bilayer elemental ferroelectric bismuth. Specifically, the paper demonstrates that by adjusting the relative position between the two layers, an alternating transition from trivial to non-trivial states can be achieved, and this transition can regulate the state of the quantum spin Hall effect. Additionally, the paper reveals significant bandgap modulation and band inversion phenomena generated during the sliding process, which are mainly due to the in-plane charge transfer process of the outer bismuth atoms. The research results indicate that bilayer bismuth can serve as a platform for achieving efficient "Berry slidtronics" for topological storage applications.