Tailoring the quantum anomalous layer Hall effect in multiferroic bilayers through sliding

Kehan Liu,Xikui Ma,Yangyang Li,Mingwen Zhao

DOI: https://doi.org/10.1038/s41524-024-01306-6

IF: 12.256

2024-06-05

npj Computational Materials

Abstract:Layer Hall effect (LHE), initially discovered in the magnetic topological insulator MnBi 2 Te 4 film, expands the Hall effect family and opens a promising avenue for layertronics applications. In this study, we present an innovative ferroelectric bilayer model to attain a tunable quantum anomalous layer Hall effect (QALHE). This model comprises two ferromagnetic orbital-active Dirac monolayers stacked antiferromagnetically, accompanied by out-of-plane electric polarization. The interplay between the layer-locked Berry curvature monopoles and the intrinsic out-of-plane electric polarization leads to layer-polarized near-quantized anomalous Hall conductance. Using first-principles calculations, we have identified a promising material for this model, namely FeS bilayer. Our calculations demonstrate that the intrinsic out-of-plane electric polarization in the Bernal-stacked FeS bilayer can induce QALHE by regulating the layer-locked Berry curvature of FeS monolayers. Importantly, the intrinsic electric field can be reversed through interlayer sliding. The discovery of ferroelectrically modulated QALHE paves the way for the integrability and non-volatility of layertronics, offering exciting prospects for future applications.

materials science, multidisciplinary,chemistry, physical

What problem does this paper attempt to address?

This paper primarily discusses a new approach to achieve interlayer electron transport through modulation of the Quantum Anomalous Layer Hall Effect (QALHE). The study proposes a novel ferroelectric bilayer model composed of two anti-ferromagnetically aligned magnetic orbital active Dirac monolayers. This model exhibits out-of-plane polarization characteristics, which enables interaction between layer-locked Berry curvature and polarization, leading to approximately quantized anomalous layer Hall conductivity.

In the absence of an external electric field, the interaction between interlayer Berry curvature dipoles and intrinsic out-of-plane polarization results in layer polarization with near-quantized anomalous Hall effect. Researchers, in this paper, discovered through first-principles calculations that FeS bilayer material possesses this property, where the inherent out-of-plane polarization can be reversed by interlayer sliding, thereby modulating QALHE. This finding provides a new avenue for designing non-volatile layer electronics devices and opens up possibilities for future high integration and non-volatile information storage and processing technologies.