Electrical Control of the Valley-Layer Hall Effect in Ferromagnetic Bilayer Lattices

Haomiao Cheng,Hongxin Chen,Guichao Hu,Xiaobo Yuan,Junfeng Ren,Xiuwen Zhao
DOI: https://doi.org/10.1021/acs.jpclett.4c02090
IF: 6.888
2024-08-22
The Journal of Physical Chemistry Letters
Abstract:The layertronics based on the layer degree of freedom are of essential significance for the construction and application of new-generation electronic devices. Although the Hall layer effect has been realized theoretically and experimentally, it is mainly based on topological and antiferromagnetic lattices. On the basis of the low-energy effective k·p model, the mechanism of the controllable valley-layer Hall effect (V-LHE) in a bilayer ferromagnetic lattice through interlayer sliding has been...
chemistry, physical,physics, atomic, molecular & chemical,nanoscience & nanotechnology,materials science, multidisciplinary
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