Abstract:Layer-polarized anomalous Hall effect (LP-AHE) attracts great interest in the fields of both condensed-matter physics and device applications. However, previous research on implementing the LP-AHE based on the paradigm of topological systems and persistent electric fields has hindered its further development. Here, we go beyond the paradigm and for the first time explore the LP-AHE in polar stacked trilayers, in addition to the bilayer. A general design principle for realizing the layer-locked valleys, spins, Berry curvatures and LP-AHE in bilayer and trilayers is mapped out based on comprehensive analysis of symmetry. Bilayers and trilayers, formed by polar stacking ferrovalley monolayers typically possessing ferromagnetism and hexagonal structure, exhibits valley polarization and out-of-plane electron polarization. Through interlayer sliding, the electric polarization and sign of valley polarization can be simultaneously reversed, yielding the sliding ferroelectricity and ferroelectricity-valley coupling. Owing to the symmetry between AB and BA stacked bilayers, the interlayer sliding lead to the opposite sign of Berry curvatures and anomalous Hall velocity, implementing the LP-AHE. The interlayer sliding and symmetry between ABC and CBA stacked trilayer lead to the layer controllable LP-AHE. We further demonstrate the feasibility of this design principle in the real bilayer and trilayer constructed from ferrovalley H-RuCl 2 monolayers through first principles calculations. Our work not only provides a new route to control the valley-dependent logic state without an external magnetic field, but also greatly enrich the research on LP-AHE in the trilayer.

Layer Hall Effect in Multiferroic Two-Dimensional Materials

Engineering Layertronics in Two-Dimensional Ferromagnetic Multiferroic Lattice

Electrical Control of the Valley-Layer Hall Effect in Ferromagnetic Bilayer Lattices

Sliding Ferroelectricity Engineered Coupling between Spin Hall Effect and Layertronics in 2D Lattice

Layer-valley Hall effect under inversion and time-reversal symmetries

Layer-polarized anomalous Hall effects in valleytronic van der Waals bilayers

Layer-Polarized Anomalous Hall Effect in Valleytronic van der Waals Bilayers

Tailoring the quantum anomalous layer Hall effect in multiferroic bilayers through sliding

Piezoelectric Manipulation and Engineering for Layertronics in Two-Dimensional Materials

Atypical breathing driven two-dimensional valley multiferroicity

Layer Coherence Origin of Intrinsic Planar Hall Effect in 2D Limit

Gate-Controllable Quadri-Layertronics in 2D Multiferroic Antiferromagnet

Ferroelectric Control of Layer-Polarized Anomalous Hall Effects in Bilayer and Trilayer RuCl 2

Coexistence and Coupling of Multiple Ferroic Orders in Van Der Waals Monolayers

Quantum layer spin Hall effect in sliding antiferromagnetic bilayers

Intrinsic Layer-Polarized Anomalous Hall Effect in Bilayer MnBi2Te4

Layer Hall Effect Induced by Hidden Berry Curvature in Antiferromagnetic Insulators

Single-Layer ScI2: A Paradigm for Valley-Related Multiple Hall Effect

Single-layer ScI 2 : A paradigm for valley-related multiple Hall effect

Prediction Of Intrinsic Ferromagnetic Ferroelectricity In A Transition-Metal Halide Monolayer

Intrinsic Valley Polarization and Anomalous Valley Hall Effect in Single-Layer 2H-Fecl2