Evolution of the electronic structure of ultrathin MnBi2Te4 Films
Runzhe Xu,Yunhe Bai,Jingsong Zhou,Jiaheng Li,Xu Gu,Na Qin,Zhongxu Yin,Xian Du,Qinqin Zhang,Wenxuan Zhao,Yidian Li,Yang Wu,Cui Ding,Lili Wang,Aiji Liang,Zhongkai Liu,Yong Xu,Xiao Feng,Ke He,Yulin Chen,Lexian Yang
DOI: https://doi.org/10.48550/arXiv.2208.01920
2022-08-03
Materials Science
Abstract:Ultrathin films of intrinsic magnetic topological insulator MnBi2Te4 exhibit fascinating quantum properties such as quantum anomalous Hall effect and axion insulator state. In this work, we systematically investigate the evolution of the electronic structure of MnBi2Te4 thin films. With increasing film thickness, the electronic structure changes from an insulator-type with a large energy gap to one with in-gap topological surface states, which is, however, still drastically different from the bulk material. By surface doping of alkali-metal atoms, a Rashba split band gradually emerges and hybridizes with topological surface states, which not only reconciles the puzzling difference between the electronic structures of the bulk and thin film MnBi2Te4 but also provides an interesting platform to establish Rashba ferromagnet that is attractive for (quantum) anomalous Hall effect. Our results provide important insights into the understanding and engineering of the intriguing quantum properties of MnBi2Te4 thin films.