Towards the Quantized Anomalous Hall effect in AlO_x-capped MnBi_2Te_4

Yongqian Wang,Bohan Fu,Yongchao Wang,Zicheng Lian,Shuai Yang,Yaoxin Li,Liangcai Xu,Zhiting Gao,Wanjun Jiang,Jinsong Zhang,Yayu Wang,Chang Liu

2024-01-01

Abstract:The quantum anomalous Hall effect in layered antiferromagnet MnBi_2Te_4 harbors a rich interplay between magnetism and topology, holding a significant promise for low-power electronic devices and topological antiferromagnetic spintronics. In recent years, MnBi_2Te_4 has garnered considerable attention as the only known material to exhibit the antiferromagnetic quantum anomalous Hall effect. However, this field faces significant challenges as realizing quantized transport at zero magnetic fields depends critically on fabricating high-quality device. In this article, we address the detrimental influences of fabrication on MnBi_2Te_4 by simply depositing an AlO_x thin layer on the surface prior to fabrications. Optical contrast and magnetotransport measurements on over 50 samples demonstrate that AlO_x can effectively preserve the pristine state of the samples and significantly enhance the anomalous Hall effect towards quantization. Scaling analysis reveals the Berry curvature dominated mechanism of the anomalous Hall effect at various magnetic configurations. By adjusting the gate voltage, we uncover a gate independent antiferromagnetism in MnBi_2Te_4. Our experiment not only pave the way for fabricating high-quality transport devices but also advance the exploration of exotic quantum physics in 2D materials.