Abstract:The interplay between nontrivial band topology and layered antiferromagnetism in MnBi2Te4 has opened up a new avenue for exploring topological phases of matter. Representative examples include the quantum anomalous Hall effect and axion insulator state observed in odd and even number layers of MnBi2Te4, when the top and bottom surfaces have parallel and antiparallel spin alignments respectively. The rich and complex spin dynamics associated with the van der Waals antiferromagnetic order is expected to generate novel topological phases and phase transitions that are unique to MnBi2Te4. Here we fabricate a device of 7-septuple-layer MnBi2Te4 covered with AlOx capping layer, which enables the investigation of antiferromagnetic quantum anomalous Hall effect over wide parameter spaces. By tuning the gate voltage and perpendicular magnetic field, we uncover a cascade of quantum phase transitions that can be attributed to the influence of spin configurations on charge transport. Furthermore, we find that an in-plane magnetic field enhances both the coercive field and exchange gap of the surface state, in sharp contrast to that in ferromagnetic quantum anomalous Hall state. We propose that these peculiar features arise from the spin flip and flop transitions inherent to van der Waals antiferromagnet. The versatile tunability of the quantum anomalous Hall effect in MnBi2Te4 paves the way for potential applications in topological antiferromagnetic spintronics.

Quantized anomalous Hall resistivity achieved in molecular beam epitaxy-grown MnBi2Te4 thin films

Reentrant quantum anomalous Hall effect in molecular beam epitaxy-grown MnBi2Te4 thin films

Magnetic-field-induced quantized anomalous Hall effect in intrinsic magnetic topological insulator MnBi$_2$Te$_4$

Magnetic-field-induced Quantized Anomalous Hall Effect in Intrinsic Magnetic Topological Insulator MnBi_2Te_4

Pursuing High-Temperature Quantum Anomalous Hall Effect in MnBi$_2$Te$_4$/Sb$_2$Te$_3$ Heterostructures

Quantum Anomalous Hall Effect in Intrinsic Magnetic Topological Insulator MnBi 2 Te 4

Towards the Quantized Anomalous Hall effect in AlO$_x$-capped MnBi$_2$Te$_4$

Correlation between magnetic domain structures and quantum anomalous Hall effect in epitaxial MnBi2Te4 thin films

Towards the Quantized Anomalous Hall effect in AlO_x-capped MnBi_2Te_4

Even–Odd Layer-Dependent Anomalous Hall Effect in Topological Magnet MnBi 2 Te 4 Thin Films

Strongly Gapped Topological Surface States on Protected Surfaces of Antiferromagnetic MnBi$_4$Te$_7$ and MnBi$_6$Te$_{10}$

Universal gapless Dirac cone and tunable topological states in (MnBi$_2$Te$_4$)$_m$(Bi$_2$Te$_3$)$_n$ heterostructures

Crossover from 2D ferromagnetic insulator to wide bandgap quantum anomalous Hall insulator in ultra-thin MnBi2Te4

Antiferromagnetic Quantum Anomalous Hall Effect Modulated by Spin Flips and Flops

Large bandgap quantum anomalous hall insulator in a designer ferromagnet-topological insulator-ferromagnet heterostructure

Persistent surface states with diminishing gap in MnBi2Te4/Bi2Te3 superlattice antiferromagnetic topological insulator

Thickness-Driven Quantum Anomalous Hall Phase Transition in Magnetic Topological Insulator Thin Films

Electronic States and Magnetic Response of MnBi2Te4 by Scanning Tunneling Microscopy and Spectroscopy

Evolution of the electronic structure of ultrathin MnBi2Te4 Films

Gate-tunable Intrinsic Anomalous Hall Effect in Epitaxial MnBi2Te4 Films

Imaging the breakdown and restoration of topological protection in magnetic topological insulator MnBi$_2$Te$_4$