Abstract:We study the electronic surface states of the semiconducting alloy BiSb. Using a phenomenological tight binding model we show that the Fermi surface of the 111 surface states encloses an odd number of time reversal invariant momenta (TRIM) in the surface Brillouin zone confirming that the alloy is a strong topological insulator. We then develop general arguments which show that spatial symmetries lead to additional topological structure, and further constrain the surface band structure. Inversion symmetric crystals have 8 Z_2 "parity invariants", which include the 4 Z_2 invariants due to time reversal. The extra invariants determine the "surface fermion parity", which specifies which surface TRIM are enclosed by an odd number of electron or hole pockets. We provide a simple proof of this result, which provides a direct link between the surface states and the bulk parity eigenvalues. We then make specific predictions for the surface state structure for several faces of BiSb. We next show that mirror invariant band structures are characterized by an integer "mirror Chern number", n_M. The sign of n_M in the topological insulator phase of BiSb is related to a previously unexplored Z_2 parameter in the L point k.p theory of pure Bi, which we refer to as the "mirror chirality", \eta. The value of \eta predicted by the tight binding model for Bi disagrees with the value predicted by a more fundamental pseudopotential calculation. This explains a subtle disagreement between our tight binding surface state calculation and previous first principles calculations on Bi. This suggests that the tight binding parameters in the Liu Allen model of Bi need to be reconsidered. Implications for existing and future ARPES experiments and spin polarized ARPES experiments will be discussed.

Origin of the surface-state band-splitting in ultrathin Bi films: from a Rashba effect to a parity effect

Direct Spectroscopic Evidence of Spin-Dependent Hybridization Between Rashba-split Surface States and Quantum-Well States.

Strong spin-orbit splitting on Bi surfaces

Microscopic mechanism for asymmetric charge distribution in Rashba-type surface states and the origin of the the energy splitting scale

Rashba spin-splitting control at the surface of the topological insulator Bi2Se3

Orbital-enhanced Warping Effect in P\textsubscript{x},P\textsubscript{y}-derived Rashba Spin Splitting of Monatomic Bismuth Surface Alloy Surface Alloy

Large Tunable Rashba Spin Splitting of A Two-Dimensional Electron Gas in Bi2se3

Rashba Effect in Pbte/Pbsrte Asymmetric Quantum Wells

Silicon surface with giant spin-splitting

Quantum well states and sizable Rashba splitting on Pb induced α-phase Bi/Si(111) surface reconstruction

Spin Polarization of Quantum Well States in Ag Films Induced by the Rashba Effect at the Surface

Photoemission Circular Dichroism and Spin Polarization of the Topological Surface States in UltrathinBi2Te3Films

Large surface-state conductivity in ultrathin Bi films

Strongly Enhanced Electron-Phonon Coupling in the Rashba-Split State of the Bi/Ag(111) Surface Alloy

Quantum oscillations in Rashba semiconductor BiTeCl

Observation of Dirac Surface States in the Noncentrosymmetric Superconductor BiPd

Interfacial protection of topological surface states in ultrathin Sb films.

Surface Landau levels and spin states in bismuth (111) ultrathin films

Chiral orbital-angular-momentum in the surface states of Bi2Se3

Giant Rashba-Splitting of One-Dimensional Metallic States in Bi Dimer Lines on InAs(100)

Surface States of the Topological Insulator Bi_{1-x}Sb_x