Abstract:Very recently, a new type of two-dimensional layered material, MoSi2N4, was fabricated that is semiconducting with weak interlayer interaction, high strength, and excellent stability. We systematically investigate the effect of vertical strain on the electronic structure of MA(2)Z(4) (M = Ti/Cr/Mo, A = Si, Z = N/P) bilayers. Taking bilayer MoSi2N4 as an example, our first-principles calculations show that its indirect band gap decreases monotonically as the vertical compressive strain increases. Under a critical strain around 22%, it undergoes a transition from semiconductor to metal. We attribute this to the opposite energy shift of states in different layers, which originates from the built-in electric field induced by the asymmetric charge transfer between two inner sublayers near the interface. Similar semiconductor to metal transitions are observed in other strained MA(2)Z(4) bilayers, and the estimated critical pressures to realize such transitions are within the same order as semiconducting transition metal dichalcogenides. The semiconductor to metal transitions in the family of MA(2)Z(4) bilayers present interesting possibilities for strain-induced engineering of their electronic properties.

Electronic Structures of Strained Layer Superlattices (Si)m/(Si1-xGex)m(100) with m=1 and m=2n (n=1-10)

Electronic-Structures of Strained-Layer Superlattices (Si)2n/(si1-Xgex)2n(100) with N=1-10

BAND STRUCTURE OF Si/Ge STRAINED LAYER SUPERLATTICE

Tight-binding Study of the Strained Monolayer Superlattices (si)1/(si1−xgex)1 (100)

Electronic Structure of (111)-Oriented Strained-Layer SiGe Superlattice

Theoretical Study of Structures and Growth of Strained Si/Ge Superlattices

Electronic Structure Of Si1-Xivx/Si Superlattices On Si (001)

Structural Ability and Electronic Density of States in (001)- and (111)-Oriented (Gap)1/(inp)1strained-Layer Superlattices

The Structure of GexSi1−x/Si Strained Layer Superlattices and Heterostructures

Lattice-Dynamics Of Strained Si/Ge Superlattices

Two-Dimensional Si-Ge Monolayers: Stabilities, Structures and Electronic Properties

Order Alloy in Ge X Si 1- X /si(100) Strained-Layer Superlattices

GEOMETRICAL CONFIGURATIONS OF (si)n/(ge)n SUPERLATTICES

Strain-induced Semiconductor to Metal Transition in MA2Z4 Bilayers (M = Ti, Cr, Mo; A = Si; Z = N, P)

Structural stability of SiGe/Si strained-layer superlattices

Electronic structure of (InSb) m /(HgTe) n short period superlattices

Electronic Phase Diagram of Single-Element Silicon “strain” Superlattices

Electronic structure of strained-layer superlattice GaN-AlN

and structure of Si-based superlattices Si1-xSnx/Si

First-Principles Calculations of Structural, Electronic, and Thermodynamic Properties of Monolayer Si1-Xgexc Sheet

Spectroscopic Ellipsometry and X-ray Diffraction Studies on Si1-xGex/Si Epifilms and Superlattices