Abstract:NiSi1-xGex films on compressively strained as well as relaxed undoped Si1-xGex epitaxially grown substrates with x=0.06-0.30 on Si(001) wafers have been studied with respect to the relative orientation of film and substrate after annealing at temperatures in the range 400-850 degreesC. Using x-ray diffraction, transmission electron microscopy, and pole-figure measurements, it was found that only the monogermanosilicide phase formed above 450 degreesC and was the only phase still at 850 degreesC. New information regarding the effects of Ge on the silicidation of Ni was also found. Thus, the preferred plane parallel to the surface is (013). Compared to NiSi, Ge suppresses the development of the other planes parallel to the surface except (013). Within this plane, the orientations of the grains pile up in such a way that the configuration NiSi1-xGex[100]//Si1-xGex[100] is avoided, which in the pole-figures leads to broad peaks in-between the substrate [100] and [010]. In addition, peaks indicating the epitaxial alignment NiSi0.8Ge0.2(+/-21-1) or (+/-2-11)//Si0.8Ge0.2(+/-2+/-20) coupled with NiSi0.8Ge0.2(+/-100)approximate to//Si0.8Ge0.2(+/-100) or (0+/-10) were found. Fine structure in the broad peaks is found to be due to lateral epitaxial alignments between grains along their common grain boundary. Based on the nonexistence of NiGe2, the observations are interpreted in terms of Ge preventing the formation of certain Ni-Ge bonds at the interface between NiSi1-xGex and the Si1-xGex substrate.

GEOMETRICAL CONFIGURATIONS OF (si)n/(ge)n SUPERLATTICES

Theoretical Study of Structures and Growth of Strained Si/Ge Superlattices

Lattice-Dynamics Of Strained Si/Ge Superlattices

Tight-binding Study of the Strained Monolayer Superlattices (si)1/(si1−xgex)1 (100)

Electronic Structures of Strained Layer Superlattices (Si)m/(Si1-xGex)m(100) with m=1 and m=2n (n=1-10)

BAND STRUCTURE OF Si/Ge STRAINED LAYER SUPERLATTICE

Electronic-Structures of Strained-Layer Superlattices (Si)2n/(si1-Xgex)2n(100) with N=1-10

Structural Ability and Electronic Density of States in (001)- and (111)-Oriented (Gap)1/(inp)1strained-Layer Superlattices

Study of Si and Ge growth on Si(100) surface

Growth and In-Plane Undulations of GaAs/Ge Superlattices on [001]-Oriented Ge and GaAs Substrates: Formation of Regular 3D Island-in-network Nanostructures

Intensity Modulation of Glancing Angle X-Ray Diffraction Spectra of Ge<sub>x</sub>Si<sub>1−x</sub>/Si Superlattices

Electronic Structure of (111)-Oriented Strained-Layer SiGe Superlattice

Order Alloy in Ge X Si 1- X /si(100) Strained-Layer Superlattices

The Structure of GexSi1−x/Si Strained Layer Superlattices and Heterostructures

Intensity Modulation of Glancing Angle X-Ray Diffraction Spectra of GexSi1−x/Si Superlattices

Strained Alpha-Sn/Ge Superlattices - Geometrical Structures And Phonon-Spectra

Germanium-Induced Texture And Preferential Orientation Of Nisi1-Xgex Layers On Si1-Xgex

Strained Α-Sn/ge Superlattices: Geometrical Structures and Phonon Spectra

SMALL-ANGLE X-RAY DIFFRACTION ANALYSIS OF GexSi1-x/Si SUPERLATTICE

Structural Characteristics of Self-Assembled-Ge/Si Quantum Dot Superlattices

Ellipsometric Properties of GexSi1−x Superlattices