Abstract:In this work, we investigated the epitaxial growth of (010) β-Ga2O3 and β-(Al x Ga1–x )2O3 films using metalorganic chemical vapor deposition (MOCVD) with trimethylgallium (TMGa) as the precursor, aiming for high growth rates for thick films. We observed pyramid-shaped defects in the β-Ga2O3 epitaxial films, characterized by polygon-shaped bumps and inverted pyramids embedded in the epi-films. To improve the surface morphology and suppress the defects formation, we developed a novel approach that incorporates a small amount of aluminum (Al) during the growth process. This addition led to significant improvements in surface morphology and reductions in both the density and size of defects for the low-Al β-(Al x Ga1–x )2O3 films, with a growth rate of 5.5 μm/h. Our findings demonstrate the effectiveness of this approach in optimizing the surface morphology of thick β-(Al x Ga1–x )2O3 films with rapid growth rates. We achieved the best surface for β-(Al x Ga1–x )2O3 in an 11 μm-thick film with approximately 2% Al composition, grown at a rate of 5.5 μm/h. However, we also observed that defect density and size increase with film thickness. Room temperature Hall measurements were used to characterize the electrical properties of the low-Al β-(Al x Ga1–x )2O3 films, which revealed a decrease in Si incorporation efficiency and room temperature mobility with increasing Al composition. Results indicated that increasing the chamber pressure led to a decrease in both growth rate and Al composition at a constant [TMAl]/[TMGa + TMAl] molar flow rate ratio. The β-(Al x Ga1–x )2O3 films (∼11 μm) with optimal surface quality were grown at chamber pressures between 60 and 100 torr. This work demonstrates the feasibility of growing (010) low-Al β-(Al x Ga1–x )2O3 thick films with high growth rates and minimal surface defects using MOCVD. Our findings provide valuable insights into β-(Al)GaO growth and suggest that introducing Al is an effective strategy for improving the surface morphology of β-(Al)GaO films. These results have important implications for the development of high-performance (Al)GaO-based vertical power devices.

Growth of BxGa1−xAs, BxAl1−xAs and BxGa1−x−yInyAs epilayers on (0 0 1)GaAs by low pressure metalorganic chemical vapor deposition

InxGa1-xSb/GaAs quantum well structures grown by molecular beam epitaxy

Mbe Growth of Gaas/Algaas(Alas) Quantum-Well and Superlattice Structures

Effect of Boron on the Surface and Optical Properties for (b)inas/gaas Self-Assembled Quantum Dots Grown by MOCVD

Properties of AlxGa1−xAs grown from a mixed Ga–Bi melt

Epitaxial growth of antiphase boundary free GaAs layer on 300 mm Si(001) substrate by metalorganic chemical vapour deposition with high mobility

Mocvd Growth and Characterization of Epitaxial Alxga1-Xn Films

MOCVD Growth of Thick β-(Al)GaO Films with Fast Growth Rates

Selective epitaxial growth of GaAs on Ge by MOCVD

Integrated Fabrication Of A High Strain Ingaas/Gaas Quantum Well Structure Under Variable Temperature And Improvement Of Properties Using Mocvd Technology

Epitaxiall Growth of Cubic and Hexagonal Gan Films on Gaas(001) Substrates by Mbe

Growth Properties of DopedIn_(0.5)(Ga_(1-x)Al_x)_(0.5)P Alloys

Optimized InGaAs growth on GaP/Si(1 0 0) templates with different low-temperature layers

Growth, catalysis and faceting of $α$-Ga$_2$O$_3$ and $α$-(In$_x$Ga$_{1-x}$)$_2$O$_3$ on $m$-plane $α$-Al$_2$O$_3$ by molecular beam epitaxy

Growth, catalysis, and faceting of α-Ga2O3 and α-(In x Ga1− x )2O3 on m -plane α-Al2O3 by molecular beam epitaxy

The growth and characterization of GaN grown on an Al2O3 coated (0 0 1) Si substrate by metalorganic vapor phase epitaxy

MOCVD growth and band offsets of \k{appa}-phase Ga2O3 on sapphire, GaN, AlN and YSZ substrates

Effect of steady illumination on the binding of carbon monoxide by carboxymethylated cytochrome c.

Metalorganic vapor phase epitaxy growth and characterization of quaternary (Ga,In)(As,Bi) on GaAs substrates

Growth Temperature Effect on the Optical and Material Properties of AlxInyGa1−x−yN Epilayers Grown by MOCVD

Inp and Ingaasp Materials Grown by Solid-Source Molecular Beam Epitaxy