Abstract:The GaAs(001) surface exhibits various surface phases depending on the surface temperature and As:Ga flux ratio during growth by molecular beam epitaxy. Using scanning tunneling microscopy and first principles total energy calculation, we carried out a systematic study of various Ga-rich phases, such as the 4 × 2 and 4 × 6 phases, utilizing migration enhanced epitaxy. Based on this investigation, we are able to propose a simple and unified structural model for the evolution of surface phases. For the Ga-rich 4 × 2 phase, we determined that Beigelsen's two Ga-dimer model fits best to our experimental and theoretical results; this consists of two Ga-dimers on the top layer and an additional Ga-dimer on the third layer, a mirror image of Chadi's two-dimer model for the As-rich 2 × 4 phase. Our direct observations reveal that there are two distinct 4 × 6 phases: (a) a more Ga-rich single ‘genuine’ 4 × 6 symmetry and (b) a less Ga-rich ‘pseudo’ 4 × 6 phase which is a mixture of the As-rich 2 × 6 phase and the reconstructed Ga-rich 4 × 2 or the ‘genuine’ 4 × 6 phase. Thus the Ga coverage of the ‘pseudo’ 4 × 6 phase can vary in a wide range depending strongly on the preparation process.

Characterization at atomic scale of epitaxially grown In 0.1Ga 0.86As/GaAs(4×3) surface

Atomic Structures of Two-Dimensional Strained Inas Epitaxial Layers on A Gaas(001) Surface: in Situ Observation of Quantum Dot Growth

Structures of the Ga-Rich4×2and4×6Reconstructions of the GaAs(001) Surface

Structural Properties of In0.53Ga0.47As Epitaxial Films Grown on Si (111) Substrates by Molecular Beam Epitaxy

Surface Morphology of GaAs(001) Grown by Solid- and Gas-Source Molecular Beam Epitaxy

In-Rich 4x2 Reconstruction In Novel Planar Growth Of Inas On Gaas(001)

MBE Growth and STM Analysis of InGaAs Films with High In Composition

Surface geometry of GaAs(001) surface Ga-rich phases grown by molecular beam epitaxy

Atomic Structures on a GaAs(001) Surface Grown by Molecular Beam Epitaxy

Influence Of Gaas(001) Pregrowth Surface Morphology And Reconstruction On The Growth Of Ingaas Layers

Influence of GaAs(0 0 1) Pregrowth Surface Morphology and Reconstruction on the Growth of InGaAs Layers

Growth And Characterization Of Gaxin1-Xas1-Ysby Epitaxial Layers Grown By Lp-Mocvd

Influence of Ga(Al)As substrates on surface morphology and critical thickness of InGaAs quantum dots

Surface chemistry and growth mechanisms studies of homo epitaxial (1 0 0) GaAs by laser molecular beam epitaxy

Indium-rich 4x2 reconstruction in novel growth of inas on the GaAs(001)

Structures Of The Ga-Rich 4x2 And 4x6 Reconstructions Of The Gaas(001) Surface

Surface Ordering of the Molecular Beam Epitaxially Grown GaAs(001)-2×4-As Reconstruction

Characterization of InAs/GaSb Superlattices Grown by MOCVD with Atomic Resolution

Effect of InxGa1 − Xas Interlayer on the Properties of In0.3Ga0.7As Epitaxial Films Grown on Si (111) Substrates by Molecular Beam Epitaxy

Morphology and reconstructed unit cell at GaAs(001)-(2×6)surface

Surface Chemistry and Growth Mechanisms Studies of Homo Epitaxial (100) Gaas by Laser Molecular Beam Epitaxy