The Effect of Gan Single Crystal Substrate Characteristics on Homo-Epitaxial Gan Films
Qiubo Li,Guangxia Liu,Shouzhi Wang,Lei Liu,Jiaoxian Yu,Guodong Wang,Peng Cui,Shiying Zhang,Xiangang Xu,Lei Zhang
DOI: https://doi.org/10.1016/j.surfin.2024.105554
IF: 6.2
2024-01-01
Surfaces and Interfaces
Abstract:GaN has attracted much attention as an important wide bandgap semiconductor. In this paper, GaN films are grown directly on GaN substrates with completely different characteristics, and it is found that the quality, surface roughness, stress and other characteristics of GaN films are directly related to GaN substrates. The smaller the warpage and roughness of wafer, the smaller the warpage and surface roughness of GaN film obtained by homo-epitaxy. Alkali etching and multiphoton photoluminescence (MPPL) reveal dislocations in GaN substrate and homo-epitaxial samples. It was also found that there is a relationship between the strain of the GaN epitaxial layer and the strain of the substrate. Finally, the basic performance of the GaN based HEMT device was demonstrated. This study can provide reference for growing higher quality and less defective GaN films, which will be beneficial for further applications of more stable and high performance GaN-based devices.