Abstract:A mechanistic understanding of interactions be-tween atomically thin two-dimensional (2D) transition-metal dichalcogenides (TMDs) and their growth substrates is important for achieving the unidirectional alignment of nuclei and seamless stitching of 2D TMD domains and thus 2D wafers. In this work, we conduct a cross-sectional scanning transmission electron microscopy (STEM) study to investigate the atomic-scale nucleation and early stage growth behaviors of chemical vapor deposited monolayer (ML-) MoS2 and molecular beam epitaxy ML-MoSe2 on a Au(111) substrate. Statistical analysis reveals the majority of as-grown domains, i.e., similar to 88% for MoS2 and 90% for MoSe2, nucleate on surface terraces, with the rest (i.e., similar to 12% for MoS2 and 10% for MoSe2) on surface steps. Moreover, within the latter case, step-associated nucleation, similar to 64% of them are terminated with a Mo-zigzag edge in connection with the Au surface steps, with the rest (similar to 36%) being S-zigzag edges. In conjunction with ab initio density functional theory calculations, the results confirm that van der Waals epitaxy, rather than the surface step guided epitaxy, plays deterministic roles for the realization of unidirectional ML-MoS2 (MoSe2) domains on a Au(111) substrate. In contrast, surface steps, particularly their step height, are mainly responsible for the integrity and thickness of MoS2/MoSe2 films. In detail, it is found that the lateral growth of monolayer thick MoS2/MoSe2 domains only proceeds across mono-Au-atom high surface steps (similar to 2.4 angstrom), but fail for higher ones (bi-Au atom step and higher) during the growth. Our cross-sectional STEM study also confirms the existence of considerable compressive residual strain that reaches similar to 3.0% for ML-MoS2/MoSe2 domains on Au(111). The present study aims to understand the growth mechanism of 2D TMD wafers.

Surface geometry of GaAs(001) surface Ga-rich phases grown by molecular beam epitaxy

Dipole coupling induced magnetic ordering in an ensemble of nanostructured islands

Atomistic Insight into the Epitaxial Growth Mechanism of Single-Crystal Two-Dimensional Transition-Metal Dichalcogenides on Au(111) Substrate

Step Bunching Formation On Gaas(001) Introduced By Surface Reconstruction

Atomic structure of the Ge(001)-(7x5.5)-Ga surface

TEM Study of the Structure of GaAs on Vicinal Si (001) Surface Grown by MBE

STUDY ON GROWTH OF C 60 MOLECULES ON GaAs(001) SUBSTRATE BY SCANNING TUNNELING MICROSCOPY

Scanning tunneling microscopy and x-ray photoelectron spectroscopy studies of atomic level structure and Fermi level pinning on GaAs(110) surfaces grown by molecular beam epitaxy

Effects of As8 structure formation on the surface morphology and internal microstructure of GaAs thin films

Bi- and Au-Induced Reconstructions on GaAs(001)-2 ×4 Surface

Effects ofAs8structure formation on the surface morphology and internal microstructure of GaAs thin films

Atomically-Flat GaAs (001) Surface Achieved by Atomic-Hydrogen Treatment and MBE Growth of Purely Cubic-Phase GaN

Atomic Structures of the Ge/Si(113)-(2 X 2) Surface.

Structure transition of Ge/Si(113) surfaces during Ge epitaxial growth

Influence of Surface Structures on Quality of CdTe(100) Thin Films Grown on GaAs(100) Substrates

Atomic Structures Of The Ge/Si(113)-(2x2) Surface

Combining advanced photoelectron spectroscopy approaches to analyse deeply buried GaP(As)/Si(100) interfaces: Interfacial chemical states and complete band energy diagrams

Surface reconstructions and faceting of the GaGe(113) system

Reconfiguration of GaAs (110) surface with the adsorption of Xe atoms

Screw-Dislocation-Driven Growth Mode in Two Dimensional GaSe on GaAs(001) Substrates Grown by Molecular Beam Epitaxy

Kinetic Monte Carlo simulations of GaN homoepitaxy on c- and m-plane surfaces