Heteroepitaxy Growth of GaAsBi on Ge(100) Substrate by Gas Source Molecular Beam Epitaxy

Peng Wang,Wenwu Pan,Xiaoyan Wu,Chunfang Cao,Shumin Wang,Qian Gong
DOI: https://doi.org/10.7567/apex.9.045502
IF: 2.819
2016-01-01
Applied Physics Express
Abstract:We have investigated the growth of GaAsBi single-crystal film on Ge substrate by gas source molecular beam epitaxy. A high-quality GaAsBi epilayer has been obtained. It has been found that the surfactant effect of Bi suppresses the interdiffusion of Ge at the GaAsBi/Ge interface and reduces the misfit dislocation density. The Bi atoms occupy the As sites, as indicated by the appearance of GaBi-like TO(G) and LO(G) phonon modes in Raman spectra. In addition, the redshift of the GaAs-like LO(G) phonon frequency has been observed in the Raman spectra, owing to the Bi-induced biaxial strain and the alloying effect as well. (C) 2016 The Japan Society of Applied Physics
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