Abstract:High-quality GaAs films have been epitaxially grown on Si (111) substrates by inserting an InxGa1−xAs interlayer with proper In composition by molecular beam epitaxy (MBE). The effect of InxGa1−xAs (0 < x < 0.2) interlayers on the properties of GaAs films grown on Si (111) substrates by MBE has been studied in detailed. Due to the high compressive strain between InGaAs and Si, InGaAs undergoes partial strain relaxation. Unstrained InGaAs has a larger lattice constant than GaAs. Therefore, a thin InGaAs layer with proper In composition may adopt a close lattice constant with that of GaAs, which is beneficial to the growth of high-quality GaAs epilayer on top. It is found that the proper In composition in InxGa1−xAs interlayer of 10% is beneficial to obtaining high-quality GaAs films, which, on the one hand, greatly compensates the misfit stress between GaAs film and Si substrate, and on the other hand, suppresses the formation of multiple twin during the heteroepitaxial growth of GaAs film. However, when the In composition does not reach the proper value (∼10%), the InxGa1−xAs adopts a lower strain relaxation and undergoes a lattice constant smaller than unstrained GaAs, and therefore introduces compressive stress to GaAs grown on top. When In composition exceeds the proper value, the InxGa1−xAs will adopt a higher strain relaxation and undergoes a lattice constant larger than unstrained GaAs, and therefore introduces tensile stress to GaAs grown on top. As a result, InxGa1−xAs interlayers with improper In composition introduces enlarged misfit stress to GaAs epilayers grown on top, and deteriorates the quality of GaAs epilayers. This work demonstrates a simple but effective method to grow high-quality GaAs epilayers and brings up a broad prospect for the application of GaAs-based optoelectronic devices on Si substrates.

Effect of the Al0.3Ga0.7As Interlayer Thickness Upon the Quality of GaAs on a Ge Substrate Grown by Metal-Organic Chemical Vapor Deposition

Effects of Al0.3Ga0.7As interlayer with pulsed atomic layer epitaxy on heterogeneous integration of GaAs/Ge grown by MOCVD

Structural Properties of In0.53Ga0.47As Epitaxial Films Grown on Si (111) Substrates by Molecular Beam Epitaxy

Effect of InxGa1 − Xas Interlayer on the Properties of In0.3Ga0.7As Epitaxial Films Grown on Si (111) Substrates by Molecular Beam Epitaxy

Impact of GaN Transition Layers in the Growth of GaN Epitaxial Layer on Silicon

Influence of the Aln Interlayer Crystal Quality on the Strain Evolution of Gan Layer Grown on Si (111)

Achieving High-Quality In0.3ga0.7as Films on Gaas Substrates by Low-Temperature Molecular Beam Epitaxy

Influence of Ga(Al)As substrates on surface morphology and critical thickness of InGaAs quantum dots

Quality-enhanced In0.3Ga0.7As Film Grown on GaAs Substrate with an Ultrathin Amorphous In0.6Ga0.4As Buffer Layer

Influences of ultrathin amorphous buffer layers on GaAs/Si grown by metal–organic chemical vapor deposition

Thermal Stress Analysis and Structural Design of AlxGa1−xN/GaN Epilayers Based on Si Substrate

The Effect of Buffer Types on the In 0.82 Ga 0.18 As Epitaxial Layer Grown on an InP (100) Substrate.

Influence of the Quality of AlN Buffer Layer on the Quality of GaN Epitaxial Layer on Silicon Substrate

A Low-Temperature Aln Interlayer to Improve the Quality of Gan Epitaxial Films Grown on Si Substrates

Influence of AlN Buffer Layer Thickness on Structural Properties of GaN Epilayer Grown on Si (111) Substrate with AlGaN Interlayer

The Effect of InGaAs/GaAs Superlattices on GaAs Epilayer Grown on Si (100) Substrate

The Effect of Single AlGaN Interlayer on the Structural Properties of GaN Epilayers Grown on Si (111) Substrates

Effect of Different Buffer Layers and Superlattice Intermediate Layers on GaAs/Si(001)

Effect of Ingaas Interlayer on the Properties of Gaas Grown on Si (111) Substrate by Molecular Beam Epitaxy

Smoothing Effect of GaAs/AlxGa1−xAs Superlattices Grown by Metalorganic Vapor Phase Epitaxy

Molecular Beam Epitaxy Growth of Gaas on an Offcut Ge Substrate