Abstract:The discovery of ferromagnetism in Mn doped GaAs [1] has ignited interest in the development of semiconductor technologies based on electron spin and has led to several proof-of-concept spintronic devices [2-4]. A major hurdle for realistic applications of (Ga,Mn)As, or other dilute magnetic semiconductors, remains their below room-temperature ferromagnetic transition temperature. Enhancing ferromagnetism in semiconductors requires understanding the mechanisms for interaction between magnetic dopants, such as Mn, and identifying the circumstances in which ferromagnetic interactions are maximized [5]. Here we report the use of a novel atom-by-atom substitution technique with the scanning tunnelling microscope (STM) to perform the first controlled atomic scale study of the interactions between isolated Mn acceptors mediated by the electronic states of GaAs. High-resolution STM measurements are used to visualize the GaAs electronic states that participate in the Mn-Mn interaction and to quantify the interaction strengths as a function of relative position and orientation. Our experimental findings, which can be explained using tight-binding model calculations, reveal a strong dependence of ferromagnetic interaction on crystallographic orientation. This anisotropic interaction can potentially be exploited by growing oriented Ga1-xMnxAs structures to enhance the ferromagnetic transition temperature beyond that achieved in randomly doped samples. Our experimental methods also provide a realistic approach to create precise arrangements of single spins as coupled quantum bits for memory or information processing purposes.

Existence and Atomic Arrangement of Microtwins in Hexagonal Mnas Ferromagnetic Epilayers Grown on Gaas (100) Substrates with Monolayer Inas Buffers

Low-temperature grown MnAs/InAs/MnAs double heterostructure on GaAs (111)B by molecular beam epitaxy

Magnetic anisotropy of epitaxial (Ga,Mn)As on (113)A GaAs

Structural and magnetic characteristics of MnAs nanoclusters embedded in Be-doped GaAs

Ferromagnetism in (In,Mn)As Diluted Magnetic Semiconductor Thin Films Grown by Metalorganic Vapor Phase Epitaxy

Ab Initio Study on the Electronic Structure and Magnetism of MnAs, MnSb, and MnBi

Solid phase epitaxy of ferromagnetic MnAs dots on GaMnAs layers

Room temperature ferromagnetic-like behavior in Mn-implanted and post-annealed InAs layers deposited by Molecular Beam Epitaxy

Ferromagnetic Properties And Structures Of The Mn-Implanted Gaas Semiconductor

Epitaxial Growth and Magnetic Properties of NiMnAs Films on GaAs Substrates

GaMnAs with high Mn composition grown in Stranski–Krastanov mode

Tetragonal phase of epitaxial room-temperature antiferromagnet CuMnAs

Formation process and superparamagnetic properties of (Mn,Ga)As nanocrystals in GaAs fabricated by annealing of (Ga,Mn)As layers with low Mn content

Voids and Mn-rich inclusions in a (Ga,Mn)As ferromagnetic semiconductor investigated by transmission electron microscopy

Atom-by-Atom Substitution of Mn in GaAs and Visualization of their Hole-Mediated Interactions

High-field Magnetocrystalline Anisotropic Resistance Effect in (Ga,mn)as

Half‐Metallic Ferromagnetism in 2D Janus Monolayers: Mn2GeX (X = As, Sb)

New evidence for structural and magnetic properties of GaAs:(Mn,Ga)As granular layers

Ferromagnetism and giant magnetoresistance in zinc-blende FeAs monolayers embedded in semiconductor structures

Epitaxial Structure and Magnetic Anisotropies of Metastable Single Crystal Co0.70Mn0.30 Film

Epitaxy and magnetism of Co on GaAs(0 0 1)