Abstract:The discovery of ferromagnetism in Mn doped GaAs [1] has ignited interest in the development of semiconductor technologies based on electron spin and has led to several proof-of-concept spintronic devices [2-4]. A major hurdle for realistic applications of (Ga,Mn)As, or other dilute magnetic semiconductors, remains their below room-temperature ferromagnetic transition temperature. Enhancing ferromagnetism in semiconductors requires understanding the mechanisms for interaction between magnetic dopants, such as Mn, and identifying the circumstances in which ferromagnetic interactions are maximized [5]. Here we report the use of a novel atom-by-atom substitution technique with the scanning tunnelling microscope (STM) to perform the first controlled atomic scale study of the interactions between isolated Mn acceptors mediated by the electronic states of GaAs. High-resolution STM measurements are used to visualize the GaAs electronic states that participate in the Mn-Mn interaction and to quantify the interaction strengths as a function of relative position and orientation. Our experimental findings, which can be explained using tight-binding model calculations, reveal a strong dependence of ferromagnetic interaction on crystallographic orientation. This anisotropic interaction can potentially be exploited by growing oriented Ga1-xMnxAs structures to enhance the ferromagnetic transition temperature beyond that achieved in randomly doped samples. Our experimental methods also provide a realistic approach to create precise arrangements of single spins as coupled quantum bits for memory or information processing purposes.

Origin of Ferromagnetism in Self-Assembled Ga1−xMnxAs Quantum Dots Grown on Si

Room-temperature Ferromagnetism in Self-Assembled (in, Mn)As Quantum Dots

Growth and magnetic properties of self-assembled (In, Mn)As quantum dots

Ge<sub><i>x</i></sub>Si<sub>1-<i>x</i></sub> virtual-layer enhanced ferromagnetism in self-assembled Mn<sub>0.06</sub>Ge<sub>0.94</sub> quantum dots grown on Si wafers by molecular beam epitaxy

Ferromagnetism in (In,Mn)As Diluted Magnetic Semiconductor Thin Films Grown by Metalorganic Vapor Phase Epitaxy

Solid phase epitaxy of ferromagnetic MnAs dots on GaMnAs layers

Nanoengineering of an Si/MnGe Quantum Dot Superlattice for High Curie-temperature Ferromagnetism.

Origin of the anomalous magnetic circular dichroism spectral shape in ferromagnetic (Ga,Mn)As: Impurity bands inside the band gap

Li(Zn,Mn)As as a new generation ferromagnet based on a I–II–V semiconductor

Electric-field-controlled ferromagnetism in high-Curie-temperature Mn 0.05 Ge 0.95 quantum dots

Ferromagnetic Properties And Structures Of The Mn-Implanted Gaas Semiconductor

Concentration-independent Local Ferromagnetic Mn Configuration Inga1−xmnxas

Research Update: Strain and Composition Effects on Ferromagnetism of Mn0.05Ge0.95 Quantum Dots

Room-Temperature Ferromagnetism of Ga 1− X Mn X N Grown by Low-Pressure Metalorganic Chemical Vapour Deposition

(La1-xBax)(Zn1-xMnx)AsO: A Two Dimensional "1111" Diluted Magnetic Semiconductor in Bulk Form

Microstructure and Ferromagnetism of Mn0.05Ge0.95 Quantum Dots/Graphene Heterostructures for Spintronic Devices

Atom-by-Atom Substitution of Mn in GaAs and Visualization of their Hole-Mediated Interactions

Room-Temperature Ferromagnetism in Mg 1– x Mn 2+ x As 2 with Layered Structure

Electric-field Controlled Ferromagnetism in MnGe Magnetic Quantum Dots.

Electric-field-controlled ferromagnetism in high-Curie-temperature Mn0.05Ge0.95 quantum dots

Experimental And Theoretical Investigations On Ferromagnetic Nature Of Mn-Doped Dilute Magnetic Semiconductors