Abstract:Gallium selenides (GaSe and Ga2Se3) and their heterostructures have been widely concerned owing to their attractive properties and potential applications in the field of photoelectric and photocatalysis. In this work, we develop an unprecedented Ga2Se3/GaSe self-assembled heterostructure through thermal oxidation of GaSe. The crystal structure and defects of GaSe and Ga2Se3/GaSe heterostructure have been studied by advanced Cs-STEM imaging. The present bulk GaSe possesses ε-polytype as the dominant phase along with γ-GaSe inclusions and structural defects, i.e., stacking faults, twins, and antisites. The Ga2Se3 layer, generated on the GaSe oxidized surface, exhibits a defective zincblende-like cubic structure where vacancies locally ordered on the {111} planes, which even results in superstructure domains. Furthermore, atomically van der Waals epitaxy and orientation relationships between Ga2Se3 and GaSe were revealed. Finally, the optical properties of Ga2Se3/GaSe heterostructures were preliminary studied and future directions for the structural development and property investigation of Ga2Se3/GaSe heterostructures were also discussed. These findings are insightful for recognizing the microscopic structure of GaSe and Ga2Se3/GaSe heterostructures and provide a valuable route for the generation of self-assembled heterostructures in other related layered semiconductors.

Chemical Bonding and Electronic Properties of SeS2-treated GaAs(100)

Increasing surface band gap of Cu(In,Ga)Se2 thin films by post depositing an In-Ga-Se thin layer.

Synchrotron radiation photoemission study of S2Cl2-treated GaAs(100) surfaces

Epitasxial Growth of ZnSe on S-Passivated GaAs (100) Substrate

Structural studies of sulfur-passivated GaAs (100) surfaces with LEED and AFM

SRPES studies of CH3CSNH2 passivated GaAs (100) surface and Mg/s/GaAs interface

The Structural, Chemical and Electronic Properties of A Stable Gas/Gaas Interface

Synchrotron radiation photoemission study of S-passivated GaAs surfaces

New surface passivation technique of GaAs by S2Cl2 treatment

S2cl2 Treatment - A New Sulfur Passivation Method of Gaas Surface

A NEW METHOD:CH 3 CSNH 2 /NH 4 OH PASSIVATED GaAs (100) SURFACE BY SRPES INVESTIGATION

Studies of Mg overlayer on GaAs(100) surface treated by CH3CSNH2

A Sulfur Passivation for Gaas Surface by an Organic Molecular, Ch3csnh2 Treatment

Passivation of the GaAs(100) surface with a vapor-deposited GaS film

Valence Band Structure of Chalcogenide Obtained by X‐Ray Photoelectron Spectroscopy and Etching Technique

Self-assembled epitaxy of Ga2Se3 on the oxidized GaSe surface and atomic imaging of the Ga2Se3/GaSe heterostructure

Investigation of Neutralized (nh4)(2)s Solution Passivation of Gaas (100) Surfaces

Gallium sulfide thin film grown on GaAs(1 0 0) by microwave glow discharge

Interface Formation Between Co With S-Passivated Gaas(100)

Combining advanced photoelectron spectroscopy approaches to analyse deeply buried GaP(As)/Si(100) interfaces: Interfacial chemical states and complete band energy diagrams

Tunable Electronic Structure in Gallium Chalcogenide van der Waals Compounds