Investigation of Neutralized (nh4)(2)s Solution Passivation of Gaas (100) Surfaces

ZL Yuan,XM Ding,HT Hu,ZS Li,JS Yang,XY Miao,XY Chen,XA Cao,XY Hou,ED Lu,SH Xu,PS Xu,XY Zhang

DOI: https://doi.org/10.1063/1.120252

IF: 4

1997-01-01

Applied Physics Letters

Abstract:Synchrotron radiation photoelectron spectroscopy (SRPES) combined with scanning electron microscopy (SEM) and gravimetric method is used to study the neutralized (NH4)2S-passivated GaAs(100) surfaces- Compared to the conventional (NH4)2S alkaline solution treatment, a thicker Ga sulfide layer and stronger Ga—S bonding on GaAs surface can be formed by dipping GaAs in neutralized (NH4)2S solution- Gravimetric data show that the etching rate of GaAs in neutralized (NH4)2S solution is about 15% lower than that in the conventional (NH4)2S solution- From SEM observation, only fewer number of etching pits with smaller size on the neutralized (NH4)2S treated GaAs surfaces can be found-