Abstract:Numerous efforts have been devoted to improve the electronic and optical properties of III-V compound materials via reduction of their nonradiative states, aiming at highly-efficient III-V sub-micrometer devices. Despite many advances, there is still a controversial debate on which combination of chemical treatment and capping dielectric layer can best reproducibly protect the crystal surface of III-Vs, while being compatible with readily available plasma deposition methods. This work reports on a systematic experimental study on the role of sulfide ammonium chemical treatment followed by dielectric coating in the passivation effect of GaAs/AlGaAs nanopillars. Our results conclusively show that the best surface passivation is achieved using ammonium sulfide followed by encapsulation with a thin layer of silicon nitride by low frequency plasma enhanced chemical deposition. Here, the sulfurized GaAs surfaces, the high level of hydrogen ions and the low frequency (380 kHz) excitation plasma that enable intense bombardment of hydrogen, all seem to provide a combined active role in the passivation mechanism of the pillars. We observe up to a 29-fold increase of the photoluminescence (PL) integrated intensity for the best samples as compared to untreated nanopillars. X-ray photoelectron spectroscopy analysis confirms the best treatments show remarkable removal of gallium and arsenic native oxides. Time-resolved micro-PL measurements display nanosecond lifetimes resulting in a record-low surface recombination velocity for dry etched GaAs nanopillars. We achieve robust, stable and long-term passivated nanopillar surfaces which creates expectations for remarkable high internal quantum efficiency (IQE>0.5) in nanoscale light-emitting diodes. The enhanced performance paves the way to many other nanostructures and devices such as miniature resonators, lasers, photodetectors and solar cells.

Neutralized (NH4)2S Solution Passivation of III–V Phosphide Surfaces

Investigation of Neutralized (nh4)(2)s Solution Passivation of Gaas (100) Surfaces

A NEW METHOD:CH 3 CSNH 2 /NH 4 OH PASSIVATED GaAs (100) SURFACE BY SRPES INVESTIGATION

The effect of (NH4)2Sx passivation on the (311)A GaAs surface and its use in AlGaAs/GaAs heterostructure devices

SRPES studies of CH3CSNH2 passivated GaAs (100) surface and Mg/s/GaAs interface

S2cl2 Treatment - A New Sulfur Passivation Method of Gaas Surface

A Sulfur Passivation for Gaas Surface by an Organic Molecular, Ch3csnh2 Treatment

Correlation of the Electronic and Atomic Structure at Passivated n-InP(100) Surfaces

Homologous Bromides Passivation of CH 3NH 3pbbr 3 Single Crystals for Photodetectors with Improved Properties

Studies of Mg overlayer on GaAs(100) surface treated by CH3CSNH2

Sulfurized Passivation of GaAs(100) Surfaces

New surface passivation technique of GaAs by S2Cl2 treatment

In Situ Passivation of Inp Surface Using H2s During Metal Organic Vapor Phase Epitaxy

Synchrotron radiation photoemission study of S-passivated GaAs surfaces

A Mild Electrochemical Sulfur Passivation Method for Gaas(100) Surfaces

SRPES AND PL FURTHER STUDIES OF CHEMICAL-PASSIVATED GaAs SURFACE BY-CH3CSNH2 TREATMENT

Surface Passivation of III-V GaAs Nanopillars by Low Frequency Plasma Deposition of Silicon Nitride for Active Nanophotonic Devices

Electrochemical Sulfur Passivation of GaAs

Combined Iodine- and Sulfur-Based Treatments for an Effective Passivation of GeSn Surface

Newly Developed Passivation of GaAs Surfaces and Devices

Synchrotron radiation photoemission study of S2Cl2-treated GaAs(100) surfaces