Study of iron overlayer on sulphur passivated GaAs(100) by synchrotron radiation photoemission
Zhu Chuan-gang,Xu Peng-shou,Faqiang Xu.,Lu Er-dong,Pan Hai-bin,Guo Hong-zhi,CG Zhu,PS Xu,FQ Xu,ED Lu,HB Pan,HZ Guo
DOI: https://doi.org/10.1088/1004-423x/7/10/006
1998-01-01
Acta Physica Sinica (Overseas Edition)
Abstract:We have studied the interface electronic structures and the chemical reaction of the Fe overlayer deposited on S-passivated GaAs(100). The chemical bond and electronic structure are different from Fe/GaAs, and the reaction between As and Fe is weakened by S atoms. This is beneficial to the magnetism in the interface. In the first stage of deposition, Fe clusters is form near S atoms due to the large electronegativity of S. The S atoms remain at the interface with Fe coverage. Magnetic ordering feature is found at a coverage higher than 0.6 nm. According to the large exchange splitting in valence band spectra, we suggest that Fe phase transition from bcc to fcc occurs with increasing coverage.