Atomistic Investigation Of Various Gan (0001) Phases On The 6h-Sic (0001) Surface
Qi-zhen Xue,Q. K. Xue,R. Z. Bakhtizin,Y. Hasegawa,I. S. T. Tsong,T. Sakurai,T. Ohno
DOI: https://doi.org/10.1103/PhysRevB.59.12604
IF: 3.7
1999-01-01
Physical Review B
Abstract:A number of superstructures of the GaN (0001) surface have been investigated systematically by reflection high-energy electron diffraction, scanning tunneling microscopy, and first-principles theoretical calculations. The GaN-thin films are grown on the Si-terminated 6H-SiC (0001) surface by an N plasma-assisted molecular-beam epitaxy under the Ga-rich condition. While the as-grown GaN surface is revealed to be a featureless 1x1 structure, post-growth deposition of Ga at lower temperatures results in the formation of a series of ordered structures, such as 2X2, 4X4, 5X5, 5 root 3X2 root 13, root 7X root 7, and 10x10 in the order of the increasing Ga coverage. An 1x1-Ga-fluid structure is obtained with the highest Ga coverage. Neither ordered structure nor smooth morphology has been observed under the N-rich regime. We conclude that the atomic structures of all these Ga-rich phases can be described best by a Ga-adatom scheme. We further show that the 5x5 and 5 root 3X2 root 13 phases are two configurations that exhibit a unique one-dimensional characteristic in the adatom arrangement. Their structures can be understood by Peierls distortion against Fermi-surface instability under the Ga-adatom scheme. [S0163-1829(99)10719-7].