Abstract:Growth and electronic properties of ultrathin Ga films on Cd（0001） are investigated by low-temperature scanning tunneling microscopy（STM） and density functional theory（DFT） calculations. It is found that Ga films exhibit the epitaxial growth with the pseudomorphic 1×1 lattice. The Ga islands deposited at 100 K show a ramified shape due to the suppressed edge diffusion and corner crossing. Furthermore, the majority of Ga islands reveal flat tops and a preferred height of three atomic layers, indicating the electronic growth at low temperature. Annealing to room temperature leads to not only the growth mode transition from electronic growth to conventional Stranski–Krastanov growth, but also the shape transition from ramified islands to smooth compact islands. Scanning tunneling spectroscopy（STS） measurements reveal that the Ga monolayer exhibits metallic behavior. DFT calculations indicate that all the interfacial Ga atoms occupy the energetically favorable hcp-hollow sites of the substrate. The charge density difference analysis demonstrates that the charge transfer from the Cd substrate to the Ga atoms is negligible, and there is weak interaction between Ga atoms and the Cd substrate. These results shall shed important light on fabrication of ultrathin Ga films on metal substrates with novel physical properties.

Stm Study of the Ga Thin Films Grown on Si(111) Surface

Epitaxial Growth of Ultrathin Gallium Films on Cd(0001)

Stm Study of Controlling Heteroepitaxial Growth of Nitride Semiconductor Films on an Atomic Scale

Growth Of Atomically Flat Nanofilms And Surface Superstructures Of Intrinsic Liquid Alloys

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

Ordered Ga Wires Formed On Si(100)-2xn: Scanning Tunneling Microscopy Study

Epitaxial growth of Si thin films with hexagonal close-packed structures on metal substrates

Study of Si and Ge growth on Si(100) surface

Atomistic Investigation Of Various Gan (0001) Phases On The 6h-Sic (0001) Surface

Stm Observation and First-Principles Determination of Ge Nanoscale Structures on Si(111)

Ordered Ga Wires Formed Onsi(100)−2×n:Scanning Tunneling Microscopy Study

Two-dimensional Growth of Al Films on Si(1 1 1)-7 × 7 at Low-Temperature

Two-Dimensional Growth Of Al Films On Si(111)-7 X 7 At Low-Temperature

MBE-STM study of the Ga-rich 4 × 2 phase of the GaAs(001) surface

Microstructures Of Gan Films Laterally Overgrown On Si(111) By Hydride Vapour Phase Epitaxy

Atomistic Study of GaN Surface Grown on Si(111)

Characterization at atomic scale of epitaxially grown In 0.1Ga 0.86As/GaAs(4×3) surface

Atomic structure of the Ge(001)-(7x5.5)-Ga surface

Scanning Tunneling Microscopy Observation of Surface Superstructures During the Growth of in on In/Si(111) Surface

Stm Study of Ag Film Initial Stages Growth on A Gan(0001) Surface Grown by Mbe

Surface geometry of GaAs(001) surface Ga-rich phases grown by molecular beam epitaxy