Abstract:GaN has shown great potential for high-power high-frequency electronic devices and short-wavelength optical devices. To integrate GaN-based optoelectronic devices with Si-based electronic devices and reduce the cost, it is desirable to grow epitaxial GaN thin films and device structures on the Si substrate. However, a proper buffer layer is essential for epitaxial growth of GaN films on Si substrate due to large mismatch between them in the area of lattice constant, thermal expansion coefficient and chemistry feature. In the present work, the growth of AlN buffer layer was studied. Wurtzite aluminum nitride thin films were grown on Si (111) and Si (100) substrates using reactive sputtering deposition under different discharge powers. X-ray diffraction (XRD) patterns showed that full width at half maximum (FWHM) of AlN (0002) peak grown on Si (111) substrates was smaller than that grown on Si (100) substrates. Vibrational characterization by Fourier transform infrared spectroscopy (FTIR) revealed that the stress in the AlN films deposited on Si (111) substrates was also smaller than that deposited on Si (100) substrates. For Si (100) substrates, the large lattice mismatch between AlN (0001) and Si (100) is a main contribution to the large strain in the formed films. For Si (111) substrates, the strain in the films deposited on Si (111) largely depends on the discharge power in sputtering, and the strain due to defects and thermal mismatch contributes largely to the residual strain in the deposited films.

PEALD-deposited crystalline GaN films on Si (100) substrates with sharp interfaces

Peald-Grown Crystalline Aln Films on Si (100) with Sharp Interface and Good Uniformity

Interfacial Tailoring for the Suppression of Impurities in GaN by in Situ Plasma Pretreatment Via Atomic Layer Deposition.

Plasma-enhanced Atomic Layer Deposition of Crystalline GaN Thin Films on Quartz Substrates with Sharp Interfaces

Impact of GaN Transition Layers in the Growth of GaN Epitaxial Layer on Silicon

Low-Temperature Growth of Crystalline Gan Thin Films on Quartz Substrates with Sharp Interfaces

A new approach to epitaxially grow high-quality GaN films on Si substrates: the combination of MBE and PLD

Investigation of GaN Growth Directly on Si (001)by ECR Plasma Enhanced MOCVD

Influences of SiNx Interlayer on the Crystalline Quality and the Surface Morphology of GaN Epitaxial Films

Investigation of GaN layer grown on Si(1 1 1) substrate using an ultrathin AlN wetting layer

Investigation into the Growth Mode of GaN Thin Films on 4H-Sic Substrates Via Plasma-Enhanced Atomic Layer Deposition

Interfacial reaction control and its mechanism of AlN epitaxial films grown on Si(111) substrates by pulsed laser deposition

GaN growth on Si and Si-SiO2-Si compliant substrates

Growth of Gallium Nitride Films on Multilayer Graphene Template Using Plasma-Enhanced Atomic Layer Deposition

Growth of GaN on γ-Al2O3/Si(001) Composite Substrates

Growth of High Quality GaN Layers with AlN Buffer on Si(1 1 1) Substrates

Baking and Plasma Pretreatment of Sapphire Surfaces As a Way to Facilitate the Epitaxial Plasma-Enhanced Atomic Layer Deposition of GaN Thin Films

High-quality crack-free GaN epitaxial films grown on Si substrates by a two-step growth of AlN buffer layer

The Impact of Nanoporous SiN X Interlayer Growth Position on High-Quality GaN Epitaxial Films

Structural, Surface, and Optical Properties of AlN Thin Films Grown on Different Substrates by PEALD

Growth of AlN Films on Si ( 100 ) and Si ( 111 ) Substrates by Reactive Magnetron Sputtering