Abstract:Metalorganic chemical vapour deposition and molecular beam epitaxy have already been demonstrated to be successful techniques for obtaining high-quality epitaxial GaN layers with low impurity concentrations and pretty good electrical properties. However, high growth temperature employed in both of these methods give rise to some intrinsic defects of the thin films, such as high background-carrier concentrations. As a low-temperature thin film deposition method, plasma-enhanced atomic layer deposition (PE-ALD) has more unique advantages compared to both methods for epitaxial growth of GaN. In this paper, the polycrystalline GaN thin films were fabricated on Si (100) substrates at 150-300 degrees C by PE-ALD. Trimethylgallium and N-2/H-2 plasma gas mixture were used as the Ga and N precursors. The growth rate of the thin films was demonstrated by the spectroscopic ellipsometer. The crystal structrue and composition of the GaN thin films were characterized by X-ray diffractometer and X-ray photoelectron spectrometer (XPS). It is showed that the growth window for PE-ALD grown GaN thin films is 210-270 degrees C, where the growth rate remains constant at 0.70 angstrom/cycle. And it is known that it is the self-limiting nature of PE-ALD that is ascribed to the plateau of the growth rate. Films grown at relatively higher temperature are polycrystalline with a hexagonal wurtzite structure, while films grown under relatively lower temperature are amorphous. The grazing incidence X-ray diffraction (GIXRD) patterns of the polycrystalline thin films reveal three main peaks located at 2 theta = 3 2.4 degrees, 34.6 degrees and 36.9 degrees, which are corresponding to the (100), (002) and (101) reflections. It is showed that the Ga, N atoms would get higher energy for more effective migration to positions with lowest energy to form ordered crystalline arrange at higher growth temperature. The XPS results show that all the N elements of the as-grown thin films are in the form of N-Ga bond, indicating that all the N elements are formed into GaN thin films; and there is a little amount of the Ga elements that exist in Ga-O bond. The fact that there is no Ga2O3-related peaks in the GIXRD pattern suggests that there is small amount of amorphous Ga2O3 dispersed in the polycrystalline GaN thin films. In the future work, reducing the concentration of the C and O impurities may be achieved by increasing the time of the reaction and plasma pules in the process formula and replacing the inductively coupled plasma with the hollow cathode plasma, respectively.

GaN Growth with Low-Temperature GaN Buffer Layers Directly on Si(111) by Hydride Vapour Phase Epitaxy

The Growth Of Gan Films On Si Substrates By Hvpe

Comparison of GaN epitaxial films on silicon nitride buffer and Si(111)

Wurtzite GaN Epitaxial Growth on Si(111) Using Silicon Nitride As an Initial Layer

Growth of High Quality GaN Layers with AlN Buffer on Si(1 1 1) Substrates

Temperature-dependent Photoluminescence Spectra of GaN Epitaxial Layer Grown on Si (111) Substrate

X-ray Diffraction, Photoluminescence and Secondary Ion Mass Spectroscopy Study of GaN Films Grown on Si(111) Substrate by Vacuum Reactive Evaporation

Investigation of preparation and properties of epitaxial growth GaN film on Si(1 1 1) substrate

Impact of GaN Transition Layers in the Growth of GaN Epitaxial Layer on Silicon

Hexagonal GaN Epitaxial Growth on Si(111) by a Vacuum Reaction Method

The Influence of V/III Ratio on GaN Grown on Patterned Sapphire Substrate with Low Temperature AlN Buffer Layer by Hydride Vapor Phase Epitaxy

Investigation Of Preparation And Properties Of Epitaxial Growth Gan Film On Si(111) Substrate

Investigation of GaN layer grown on Si(1 1 1) substrate using an ultrathin AlN wetting layer

Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition

Growth and Characterization of GaN Films on Si(111) Substrate Using High-Temperature AlN Buffer Layer

High Quality GaN Layers Grown on SiC Substrates with AlN Buffers by Metalorganic Chemical Vapor Deposition

Enhancing two-dimensional growth of high-temperature AlN buffer to improve the quality of GaN on Si grown by ex situ two-step method

Deposition and Crystallization of Amorphous Gan Buffer Layers on Si(111)Substrates

A new approach to epitaxially grow high-quality GaN films on Si substrates: the combination of MBE and PLD

Epitaxial Growth Of Wurtzite Gan On Si(111) By A Vacuum Reactive Evaporation

Molecular dynamics simulations and experimental studies on low-temperature growth of GaN