Abstract:A number of superstructures of the GaN (0001) surface have been investigated systematically by reflection high-energy electron diffraction, scanning tunneling microscopy, and first-principles theoretical calculations. The GaN-thin films are grown on the Si-terminated 6H-SiC (0001) surface by an N plasma-assisted molecular-beam epitaxy under the Ga-rich condition. While the as-grown GaN surface is revealed to be a featureless 1x1 structure, post-growth deposition of Ga at lower temperatures results in the formation of a series of ordered structures, such as 2X2, 4X4, 5X5, 5 root 3X2 root 13, root 7X root 7, and 10x10 in the order of the increasing Ga coverage. An 1x1-Ga-fluid structure is obtained with the highest Ga coverage. Neither ordered structure nor smooth morphology has been observed under the N-rich regime. We conclude that the atomic structures of all these Ga-rich phases can be described best by a Ga-adatom scheme. We further show that the 5x5 and 5 root 3X2 root 13 phases are two configurations that exhibit a unique one-dimensional characteristic in the adatom arrangement. Their structures can be understood by Peierls distortion against Fermi-surface instability under the Ga-adatom scheme. [S0163-1829(99)10719-7].

Initial Stages of Cubic GaN Growth on the GaAs(001) Surface Studied by Scanning Tunneling Microscopy

Stm Study of Controlling Heteroepitaxial Growth of Nitride Semiconductor Films on an Atomic Scale

Atomistic Study of GaN Surface Grown on Si(111)

Scanning tunneling microscopy studies of III-nitride thin film heteroepitaxial growth

Structural characteristic of cubic GaN nucleation layers on GaAs(001) substrates by MOCVD

Ion-induced nitridation of GaAs(1 0 0) surface

Structural characteristic of cubic GaN nucleation layers on GaAs(0 0 1) substrates by MOCVD

Atomically-Flat GaAs (001) Surface Achieved by Atomic-Hydrogen Treatment and MBE Growth of Purely Cubic-Phase GaN

Imaging wurtzite GaN surfaces by molecular beam epitaxy-scanning tunneling microscopy

Vacuum Nanotechnology. Synthesis of New Materials and Characterization of Surfaces and Interfaces. Atomically-Flat GaAs(001) Surface Achieved by Atomic-Hydrogen Treatment and MBE Growth of Purely Cubic-Phase GaN.

Nitride Semiconductor Surfaces. Atomic Structures of GaN(0001) Reconstructed Surfaces. Approach Using First-Principles Simulation and STM Measurement.

Nitridation of GaAs(001) Using N2-RF Plasma

Atomistic Investigation Of Various Gan (0001) Phases On The 6h-Sic (0001) Surface

Atomically Flat (0 0 1)gaas Surface Prepared by Two-Step Atomic-Hydrogen Treatment and Its Application to Heteroepitaxy of GaN

N-Plasma Assisted Molecular Beam Epitaxy of GaN(0001̄) Thin Films on 6H-Sic(0001̄)

Stm Study of Ag Film Initial Stages Growth on A Gan(0001) Surface Grown by Mbe

Structures of GaN(0001)-(2 × 2), -(4 × 4), and -(5 × 5) surface reconstructions

Growth Mechanisms of GaN/GaAs Nanostructures by Droplet Epitaxy Explained by Complementary Experiments and Simulations

Epitaxial Growth and Characterization of Gan Films on (001) Gaas Substrates by Radio-Frequency Molecular Beam Epitaxy

The effect of the first GaN monolayer on the nitridation damage of molecular beam epitaxy grown GaN on GaAs(001)

Two-dimensional X-ray diffraction and transmission electron microscopy study on the effect of magnetron sputtering atmosphere on GaN/SiC interface and gallium nitride thin film crystal structure