Abstract:X-ray diffraction reciprocal space maps and pole figures were used to analyse the cubic GaN epitaxial layers grown on (0 0 1) GaAs by r.f. plasma source MBE; the presence of hexagonal phase in cubic GaN layers was detected by high resolution x-ray analysis and the relationships among various crystal axes of cubic and hexagonal phase GaN were analysed with respect to V/III source-supply ratio. As for the growth conditions of the epitaxial layers, the V/III ratio was found to drastically affect the quality of the layers. High-temperature growth under near-stoichiometric conditions was necessary to obtain high quality epitaxial layers. It was found that inclusion of the hexagonal phase in the cubic GaN layers could be less than 0.4%, though previously reported typical c-GaN epitaxial layers included as much as 10–20% hexagonal phase GaN. On the basis of the measurements and analyses of reciprocal space maps and pole figures, it was revealed that the orientation of crystal axes of the hexagonal phase was unique in the present GaN epitaxial layers and they were different from those of previously reported c-GaN epitaxial layers.

Structural characteristic of cubic GaN nucleation layers on GaAs(0 0 1) substrates by MOCVD

Structural characteristic of cubic GaN nucleation layers on GaAs(001) substrates by MOCVD

Structural Characterization Of Cubic Gan Grown On Gaas(001) Substrates

X-ray diffraction analysis of MOCVD grown GaN buffer layers on GaAs(0 0 1) substrates

Investigation of {111}A and {111}B planes of c-GaN epilayers grown on GaAs(001) by MOCVD

Investigation of {1 1 1}A and {1 1 1}B planes of c-GaN epilayers grown on GaAs(0 0 1) by MOCVD

Film and interface of heteroepitaxial cubic GaN on (001) GaAs substrates

Epitaxial Growth and Characterization of Gan Films on (001) Gaas Substrates by Radio-Frequency Molecular Beam Epitaxy

X-ray diffraction reciprocal space and pole figure characterization of cubic GaN epitaxial layers grown on (0 0 1) GaAs by molecular beam epitaxy

Characterization of Crystal Lattice Constant and Dislocation Density of Crack-Free GaN Films Grown on Si(1 1 1)

Epitaxiall Growth of Cubic and Hexagonal Gan Films on Gaas(001) Substrates by Mbe

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

X-Ray Diffraction Reciprocal Space And Pole Figure Characterization Of Cubic Gan Epitaxial Layers Grown On (001) Gaas By Molecular Beam Epitaxy

Low-temperature growth of cubic GaN by metalorganic chemical-vapor deposition

Influences Of Initial Buffer Layer Deposition On Electrical And Optical Properties In Cubic Gan Grown On Gaas(100) By Metalorganic Chemical Vapor Deposition

Structural Characterization of Hexagonal GaN Thin Films Grown by MOCVD on 4H-Sic Substrate

Initial Stages of Cubic GaN Growth on the GaAs(001) Surface Studied by Scanning Tunneling Microscopy

X-Ray diffraction determination of the fractions of hexagonal and twinned phases in cubic GaN layers grown on (001)GaAs substrate

Structural Properties of GaN(0001) Epitaxial Layers Revealed by High Resolution X-ray Diffraction

Structural Characterization of GaN Single Crystal Layers Grown by Vapor Transport from a Gallium Oxide (ga 2 O 3 ) Powder Source

Low-Pressure Metalorganic Chemical-Vapor-Deposition of Cubic Gan over (100)gaas Substrates