Abstract:Epitaxial thin film growth by vapor deposition or molecular beam epitaxy under ultra-high vacuum conditions generally occurs in two stages: (i) nucleation and growth of well-separated islands on the substrate; (ii) subsequent formation of a thicker continuous film with possible kinetic roughening. For homoepitaxial growth, two-dimensional (2D) monolayer islands are formed during submonolayer deposition. Typically, the presence of a step-edge barrier inhibits downward transport and leads to the formation of mounds (multilayer stacks of 2D islands) during multilayer growth. For heteroepitaxial growth, islands formed in the initial stages of deposition sometimes have a 2D monolayer structure. However, they may instead exhibit bilayer or 3D multilayer structure due to, e.g., a high film surface energy, strain, or quantum size effects. Various growth modes are possible for thicker films. Atomistic modeling provides the most detailed picture of film growth. For coherent (defect-free) epitaxial films, lattice-gas modeling analyzed by kinetic Monte Carlo simulation (KMC) is particularly successful in describing film growth on the appropriate time and length scales. For large islands or complex systems, another effective and instructive approach is laterally coarse-grained step-dynamics modeling which tracks only the evolution of step edges in each layer. However, fully coarse-grained 3D continuum modeling for the evolution of a film height function does not yet have predictive capability. Examples are provided for: Ag homoepitaxy on (100), (111) and (110) surfaces; Ag heteroepitaxy on lattice-matched substrates including NiAl(110), NiAl(100), and Fe(100); and Ag heteroepitaxy on 5-fold icosohedral Al-Pd-Mn and 2-fold decagonal Al-Cu-Co quasicrystalline surfaces.

Stm Study of Ag Film Initial Stages Growth on A Gan(0001) Surface Grown by Mbe

Layer-By-Layer Growth of Ag on A Gan(0001) Surface

Stm Study of Controlling Heteroepitaxial Growth of Nitride Semiconductor Films on an Atomic Scale

Atomistic Study of GaN Surface Grown on Si(111)

Epitaxial Growth of Ultrathin Gallium Films on Cd(0001)

Initial Stages of Cubic GaN Growth on the GaAs(001) Surface Studied by Scanning Tunneling Microscopy

Observation of a Surface Alloying-to-dealloying Transition During Growth of Bi on Ag(111)

Surface Morphology of GaAs(001) Grown by Solid- and Gas-Source Molecular Beam Epitaxy

Surfactantless Photochemical Growth of Ag Nanostructures on Gan Epitaxial Films with Controlled Morphologies and Their Application for Sers

Epitaxial Growth and Characterization of Gan Films on (001) Gaas Substrates by Radio-Frequency Molecular Beam Epitaxy

From Initial to Late Stages of Epitaxial Thin Film Growth: Stm Analysis and Atomistic or Coarse-Grained Modeling

Stm Study of the Ga Thin Films Grown on Si(111) Surface

Gd on GaN(0001) Surface: Growth, Interaction, and Fermi Level Movement

Epitaxiall Growth of Cubic and Hexagonal Gan Films on Gaas(001) Substrates by Mbe

Structure Shift of GaN Among Nanowall Network, Nanocolumn, and Compact Film Grown on Si (111) by MBE

Microscopic Study of Submonolayer Nucleation Characteristics During GaN (0001) Homoepitaxial Growth

Surface and Interface Studies of Gan Epitaxy on Si(111) Via Zrb2 Buffer Layers

Understanding the Growth Mechanism of GaN Epitaxial Layers on Mechanically Exfoliated Graphite.

Surface Reaction Mechanism on GaN MOVPE Growth

Effects of Growth Rate on Structural Property and Adatom Migration Behaviors for Growth of GaInNAs/GaAs (001) by Molecular Beam Epitaxy

Exploration of Complex Multilayer Film Growth Morphologies: Stm Analysis and Predictive Atomistic Modeling for Ag on Ag(111)