Abstract:Remote epitaxy is a very promising technique for the preparation of single-crystal thin films of flexibly transferred III-V group semiconductors. However, the epilayer nucleation mechanism of remote epitaxy and the epilayer-substrate interface interactions on both sides of graphene are not well-understood. In this study, remote homo- and heteroepitaxy of GaN nucleation layers (NLs) were performed by metal organic chemical vapor deposition on GaN, sapphire (Al2O3), and AlN substrates with transferred single-layer graphene, respectively. The results show that the interface damage of SLG/GaN at high temperature is difficult for us to achieve the remote homoepitaxy of GaN. Therefore, we explored the nucleation mechanism of remote heteroepitaxy of GaN on SLG/Al2O3 and SLG/AlN substrates. Nucleation density, surface coverage, diffusion coefficient, and scaled nucleation density were used to quantify the differences in nucleation information of GaN grown on different polar substrates. Using high-resolution X-ray diffraction and high-resolution transmission electron microscopy analysis, we revealed the interfacial orientation relationship and atomic arrangement distribution between the GaN NLs and substrates on both sides of the SLG. The electrostatic potential effect and adsorption ability of the substrates were further investigated by first-principles calculations based on density functional theory, revealing the principle that the substrate polarity affects the atomic nucleation density. The partial density of states shows that there is long-range orbital hybridization of the electronic states of the substrate and adsorbed atoms in remote epitaxy, and the crystal properties of the substrate play an important role in the in-plane orientation relationship of the NL and substrate across the SLG. The abovementioned results reveal the nature of remote epitaxy and broaden the perspective for the rapid and large-area preparation of single-crystal GaN films.

Understanding the Growth Mechanism of GaN Epitaxial Layers on Mechanically Exfoliated Graphite.

Epitaxial Growth Mechanisms of Single-Crystalline GaN on Single-Crystalline Graphene

Impact of GaN Transition Layers in the Growth of GaN Epitaxial Layer on Silicon

Remote Epitaxy and Exfoliation of GaN Via Graphene

Epitaxial Growth of High-Quality GaN Films Based on Bilayer Graphene

Study on Nucleation and Growth Mode of GaN on Patterned Graphene by Epitaxial Lateral Overgrowth

Growth of GaN on γ-Al2O3/Si(001) Composite Substrates

GaN Epitaxial Layers Grown on Multilayer Graphene by MOCVD

Investigation of GaN with Low Threading Dislocation Density Grown on Graphene/Sputtered AlN Composite Substrate

The Investigation of Molecular Beam Epitaxy Growth of GaN by Molecular Dynamics Simulation

Growth mechanisms of GaN epitaxial films grown on ex situ low-temperature AlN templates on Si substrates by the combination methods of PLD and MOCVD

Analysis of GaN Crystal Growth Mechanism in Liquid-Phase Epitaxial Na-flux Method

Epitaxial Growth and Characterization of Gan Films on (001) Gaas Substrates by Radio-Frequency Molecular Beam Epitaxy

Growth Mechanism of Exfoliable GaN by Van Der Waals Epitaxy on Wrinkled Hexagonal Boron Nitride

Van Der Waals Coherent Epitaxy of GaN and InGaN/GaN Multi-Quantum-well Via a Graphene Inserted Layer

Atomic Force Microscopy Study of GaN Grown on Al2O3(0001) by LP-MOVPE

Improved nucleation of AlN on in situ nitrogen doped graphene for GaN quasi-van der Waals epitaxy

Growth of Gallium Nitride Films on Multilayer Graphene Template Using Plasma-Enhanced Atomic Layer Deposition

Epitaxial Growth of GaN on Magnetron Sputtered AlN/Hexagonal BN/Sapphire Substrates

Long-Range Orbital Hybridization in Remote Epitaxy: the Nucleation Mechanism of GaN on Different Substrates Via Single-Layer Graphene.

Defect-pit-assisted Growth of GaN Nanostructures: Nanowires, Nanorods and Nanobelts