Abstract:As the third generation semiconductor material,gallium nitride(GaN)is widely used in electronic devices and optoelectronic devices due to its excellent characteristics such as wide band gap,high breakdown field strength,high electron mobility,outstanding thermal conductivity,and direct band gap.However,it is difficult to obtain high quality single crystal GaN thin films due to the mismatch between GaN material and substrate in early phase of preparation.Until the two-step growth method is proposed,in which the nucleation layer of aluminum nitride(AlN)is firstly grown on the substrate at low temperature,and then GaN is grown at high temperature,the quality of GaN is greatly improved.Nowadays,AlN nucleation layers are fabricated via magnetron sputtering and molecular beam epitaxy,etc.To further improve the quality of GaN crystals,this study used plasma-enhanced atomic layer deposition(PEALD)method to prepare AlN nucleation layers for the epitaxial growth of GaN on a two-inch c-plane sapphire substrate.Compared with the magnetron sputtering method and molecular beam epitaxy method,the crystal quality of AlN prepared by PEALD method displays advantages of simple process,low cost and high yield.Measurements on deposited AlN films show that the deposition rate is 0.1 nm/cycle and the films have island-like structures varying with its thickness.Epitaxial GaN measurements show that GaN epitaxial layer can obtain the smoothest surface with a root mean square roughness of 0.272 nm,the best optical properties,and the lowest dislocation density when AlN is deposited with a thickness of 20.8 nm.In conclusion,a new method of epitaxial single crystal GaN on AlN prepared by PEALD has been built with optimal deposition at 20.8 nm of AlN to obtain high quality GaN thin films,it can be used to prepare high electron mobility transistors and light-emitting diodes.

Epitaxial Growth of GaN on Magnetron Sputtered AlN/Hexagonal BN/Sapphire Substrates

Epitaxy Single Crystal GaN on AlN Prepared by Plasma-enhanced Atomic Layer Deposition

Epitaxial Growth And Structural Analysis Of Aln/Gan Heterostructures

High-quality crack-free GaN epitaxial films grown on Si substrates by a two-step growth of AlN buffer layer

Epitaxial Growth of High-Quality GaN Films Based on Bilayer Graphene

Growth mechanisms of GaN epitaxial films grown on ex situ low-temperature AlN templates on Si substrates by the combination methods of PLD and MOCVD

Epitaxiall Growth of Cubic and Hexagonal Gan Films on Gaas(001) Substrates by Mbe

EPITAXIAL GROWTH OF AlN AND NbN FILMS ON (111) MgO SUBSTRATE

High Quality GaN Layers Grown on SiC Substrates with AlN Buffers by Metalorganic Chemical Vapor Deposition

A new approach to epitaxially grow high-quality GaN films on Si substrates: the combination of MBE and PLD

Comparative Research of GaN Growth Mechanisms on Patterned Sapphire Substrates with Sputtered AlON Nucleation Layers

Two-dimensional X-ray diffraction and transmission electron microscopy study on the effect of magnetron sputtering atmosphere on GaN/SiC interface and gallium nitride thin film crystal structure

The Effect of Nitridation on Sputtering AlN on Composited Patterned Sapphire Substrate

Understanding the Growth Mechanism of GaN Epitaxial Layers on Mechanically Exfoliated Graphite.

Van Der Waals Epitaxial AlGaN/GaN Growth on Hexagonal BN Via Two-Dimensional N-induced Dislocation Slip

The solution of wetting issues in GaN epitaxy on (111) SCD with magnetron sputtered AlN

Improved nucleation of AlN on in situ nitrogen doped graphene for GaN quasi-van der Waals epitaxy

AlN Thin Films Grown on Different Substrates by Metal Nitride Vapor Phase Epitaxy

Study on Growing Thick AlGaN Layer on C-Plane Sapphire Substrate and Free-Standing GaN Substrate

Enhancing two-dimensional growth of high-temperature AlN buffer to improve the quality of GaN on Si grown by ex situ two-step method

Effect of AlN Nucleation Layer on the Structural Properties of Bulk GaN Grown on Sapphire by Molecular-Beam Epitaxy