Abstract:The work demonstrates the exfoliation of wafer‐scale GaN films and its application in flexible light‐emitting diodes (LEDs). First‐principles calculations reveal that the adsorption energy of Al atoms on O2‐plasma‐treated h‐BN is stronger than that of Ga atoms, and a strain‐relaxation model for nitrides on h‐BN is proposed. The flexible free‐standing LED exhibits ≈66% luminescence enhancement compared to that before transfer. Epitaxy growth and mechanical transfer of high‐quality III‐nitrides using 2D materials, weakly bonded by van der Waals force, becomes an important technology for semiconductor industry. In this work, wafer‐scale transferrable GaN epilayer with low dislocation density is successfully achieved through AlN/h‐BN composite buffer layer and its application in flexible InGaN‐based light‐emitting diodes (LEDs) is demonstrated. Guided by first‐principles calculations, the nucleation and bonding mechanism of GaN and AlN on h‐BN is presented, and it is confirmed that the adsorption energy of Al atoms on O2‐plasma‐treated h‐BN is over 1 eV larger than that of Ga atoms. It is found that the introduced high‐temperature AlN buffer layer induces sufficient tensile strain during rapid coalescence to compensate the compressive strain generated by the heteromismatch, and a strain‐relaxation model for III‐nitrides on h‐BN is proposed. Eventually, the mechanical exfoliation of single‐crystalline GaN film and LED through weak interaction between multilayer h‐BN is realized. The flexible free‐standing thin‐film LED exhibits ≈66% luminescence enhancement with good reliability compared to that before transfer. This work proposes a new approach for the development of flexible semiconductor devices.

Van Der Waals Epitaxial AlGaN/GaN Growth on Hexagonal BN Via Two-Dimensional N-induced Dislocation Slip

Wafer Level Quasi-Van Der Waals Epitaxy of AlGaN/GaN Heterojunctions on Sp2-Bonded BN Controlled by AlN Nucleation Layer

Growth Mechanism of Exfoliable GaN by Van Der Waals Epitaxy on Wrinkled Hexagonal Boron Nitride

Investigation of the Dislocation Behavior of 6- and 8-Inch AlGaN/GaN HEMT Structures with a Thin AlGaN Buffer Layer Grown on Si Substrates

van der Waals epitaxy of 2D h -AlN on TMDs by atomic layer deposition at 250 °C

Growth model of van der Waals epitaxy of films: A case of AlN films on multilayer graphene/SiC.

Growth mechanisms of GaN epitaxial films grown on ex situ low-temperature AlN templates on Si substrates by the combination methods of PLD and MOCVD

Low-temperaturevan Der Waals Epitaxy of GaN Films on Graphene Through AlN Buffer by Plasma-Assisted Molecular Beam Epitaxy

Van Der Waals Coherent Epitaxy of GaN and InGaN/GaN Multi-Quantum-well Via a Graphene Inserted Layer

Epitaxial Growth And Structural Analysis Of Aln/Gan Heterostructures

Flexible graphene-assisted van der Waals epitaxy growth of crack-free AlN epilayer on SiC by lattice engineering

Growth mechanism of AlN on hexagonal BN/sapphire substrate by metal–organic chemical vapor deposition

Epitaxial Growth of GaN-based Heterostructures of High Quality on Si Substrates Using a Large Lattice-Mismatch Induced Stress Control Technology

Wafer‐Scale Transferrable GaN Enabled by Hexagonal Boron Nitride for Flexible Light‐Emitting Diode

Investigation of GaN with Low Threading Dislocation Density Grown on Graphene/Sputtered AlN Composite Substrate

Hybrid van der Waals Epitaxy

Lattice Structure and Bandgap Control of 2D GaN Grown on Graphene/Si Heterostructures.

Enhancing two-dimensional growth of high-temperature AlN buffer to improve the quality of GaN on Si grown by ex situ two-step method

Hydride Vapor Phase Epitaxy of GaN on Silicon Covered by Nanostructures

Dislocation Reduction Through Nucleation and Growth Selectivity of Metal-Organic Chemical Vapor Deposition GaN

Study on AlN Buffer Layer for GaN on Graphene/copper Sheet Grown by MBE at Low Growth Temperature