Abstract:The excellent physical and chemical properties of two-dimensional (2D) materials provide the possibility to promote the further development of 3D III-nitride semiconductors. Growing GaN films on 2D materials like hexagonal boron nitride (h-BN) can reduce the defects and stress caused by lattice mismatch and thermal mismatch and improve the crystal quality of GaN. Here, the growth mechanism of exfoliable GaN films grown on processed wrinkled h-BN/sapphire substrates by van der Waals epitaxy is reported. The processed wrinkled h-BN is obtained from natural wrinkled h-BN through O2 plasma treatment. The O2 plasma creates new atomic steps in the wrinkles and also additional defects in the flat areas. Metal-organic chemical vapor deposition was used to grow GaN, and it was found that GaN preferentially nucleated along the processed wrinkles. The physical mechanism of preferential nucleation of GaN along h-BN wrinkles was investigated with first-principles calculations, which reveals that compared with flat areas, the wrinkles showed greater N atom adsorption energy (-5.55 eV). The complete growth process of GaN nucleation along the wrinkles, followed by lateral growth of islands and finally merging to form a flat single-crystal GaN film, was fully demonstrated. The obtained GaN film has a typical atomic-step terrace, a dislocation density of 7.23 x 108 cm-2, and a low compressive stress of 0.095 GPa. Due to the weak van der Waals force between the h-BN layers, the obtained GaN film can be easily released. Our work provides a new strategy for the growth of high-quality exfoliable GaN films on 2D materials, laying the foundation for the preparation of transferable GaN flexible devices.

Growth model of van der Waals epitaxy of films: A case of AlN films on multilayer graphene/SiC.

Flexible graphene-assisted van der Waals epitaxy growth of crack-free AlN epilayer on SiC by lattice engineering

Hybrid van der Waals Epitaxy

Direct van der Waals Epitaxy of Crack-Free AlN Thin Film on Epitaxial WS2

Direct van der Waals Epitaxy of Crack-Free AlN Thin Film on Epitaxial WS₂.

Heteroepitaxial Growth Of Wafer Scale Highly Oriented Graphene Using Inductively Coupled Plasma Chemical Vapor Deposition

Van Der Waals Coherent Epitaxy of GaN and InGaN/GaN Multi-Quantum-well Via a Graphene Inserted Layer

Low-temperaturevan Der Waals Epitaxy of GaN Films on Graphene Through AlN Buffer by Plasma-Assisted Molecular Beam Epitaxy

Transferable GaN Films on Graphene/SiC by Van Der Waals Epitaxy for Flexible Devices

Van Der Waals Epitaxial Growth of Single-Crystal Molecular Film

Van Der Waals Epitaxial AlGaN/GaN Growth on Hexagonal BN Via Two-Dimensional N-induced Dislocation Slip

Van der Waals epitaxy of nearly single-crystalline nitride films on amorphous graphene-glass wafer

Demonstration of Epitaxial Growth of Strain-Relaxed GaN Films on Graphene/sic Substrates for Long Wavelength Light-Emitting Diodes

Growth of GaN epitaxial films on polycrystalline diamond by metal-organic vapor phase epitaxy

Van Der Waals Epitaxy of SnS Film on Single Crystal Graphene Buffer Layer on Amorphous SiO2/Si

Three-step Growth of AlN Films on Sapphire Substrates by Metal Nitride Vapor Phase Epitaxy

First-principle Calculations of Adsorption of Ga (al, N) Adatoms on the Graphene for the Van-Der-waals Epitaxy

Growth Mechanism of Exfoliable GaN by Van Der Waals Epitaxy on Wrinkled Hexagonal Boron Nitride

Evolution of the surface morphology of AlN epitaxial film by HVPE

AlN Thin Films Grown on Different Substrates by Metal Nitride Vapor Phase Epitaxy

Epitaxial Growth of High Quality AlN Films on Si Substrates