Abstract:The work demonstrates the exfoliation of wafer‐scale GaN films and its application in flexible light‐emitting diodes (LEDs). First‐principles calculations reveal that the adsorption energy of Al atoms on O2‐plasma‐treated h‐BN is stronger than that of Ga atoms, and a strain‐relaxation model for nitrides on h‐BN is proposed. The flexible free‐standing LED exhibits ≈66% luminescence enhancement compared to that before transfer. Epitaxy growth and mechanical transfer of high‐quality III‐nitrides using 2D materials, weakly bonded by van der Waals force, becomes an important technology for semiconductor industry. In this work, wafer‐scale transferrable GaN epilayer with low dislocation density is successfully achieved through AlN/h‐BN composite buffer layer and its application in flexible InGaN‐based light‐emitting diodes (LEDs) is demonstrated. Guided by first‐principles calculations, the nucleation and bonding mechanism of GaN and AlN on h‐BN is presented, and it is confirmed that the adsorption energy of Al atoms on O2‐plasma‐treated h‐BN is over 1 eV larger than that of Ga atoms. It is found that the introduced high‐temperature AlN buffer layer induces sufficient tensile strain during rapid coalescence to compensate the compressive strain generated by the heteromismatch, and a strain‐relaxation model for III‐nitrides on h‐BN is proposed. Eventually, the mechanical exfoliation of single‐crystalline GaN film and LED through weak interaction between multilayer h‐BN is realized. The flexible free‐standing thin‐film LED exhibits ≈66% luminescence enhancement with good reliability compared to that before transfer. This work proposes a new approach for the development of flexible semiconductor devices.

Transferable GaN Films on Graphene/SiC by Van Der Waals Epitaxy for Flexible Devices

Epitaxy and photoresponse of two-dimensional GaSe crystals on flexible transparent mica sheets.

Van Der Waals Epitaxy of III‐Nitride Semiconductors Based on 2D Materials for Flexible Applications

Flexible single-crystalline GaN substrate by direct deposition of III-N thin films on polycrystalline metal tape

Growth model of van der Waals epitaxy of films: A case of AlN films on multilayer graphene/SiC.

Low-temperaturevan Der Waals Epitaxy of GaN Films on Graphene Through AlN Buffer by Plasma-Assisted Molecular Beam Epitaxy

Transferable Ga2O3 Membrane for Vertical and Flexible Electronics via One-Step Exfoliation

Van Der Waals Coherent Epitaxy of GaN and InGaN/GaN Multi-Quantum-well Via a Graphene Inserted Layer

Van Der Waals Epitaxy for High-Quality Flexible VO2 Film on Mica Substrate

GaN Epitaxial Layers Grown on Multilayer Graphene by MOCVD

Transferable InGaN Quantum Well Grown at Low Temperature on Amorphous Substrates by Plasma-Assisted Molecular Beam Epitaxy

Wafer‐Scale Transferrable GaN Enabled by Hexagonal Boron Nitride for Flexible Light‐Emitting Diode

Demonstration of Epitaxial Growth of Strain-Relaxed GaN Films on Graphene/sic Substrates for Long Wavelength Light-Emitting Diodes

Heteroepitaxial GaAs thin-films on flexible, large-area, single-crystal-like substrates for wide-ranging optoelectronic applications

Direct Growth of Wafer-Scale Self-Separated GaN on Reusable 2D Material Substrates

Graphene-assisted remote epitaxy wrinkle-free GaN films on flexible mica

Flexible graphene-assisted van der Waals epitaxy growth of crack-free AlN epilayer on SiC by lattice engineering

Growth Mechanism of Exfoliable GaN by Van Der Waals Epitaxy on Wrinkled Hexagonal Boron Nitride

First-principle Calculations of Adsorption of Ga (al, N) Adatoms on the Graphene for the Van-Der-waals Epitaxy

Van der Waals epitaxy of GaN-based light-emitting diodes on wet-transferred multilayer graphene film

Epitaxy of Single‐Crystalline GaN Film on CMOS‐Compatible Si(100) Substrate Buffered by Graphene