Abstract:As well-known,heteroepitaxial growth on sapphire is mainly employed to obtain optoelectronic(devices) because there is no suitable substrate matching with GaN.Therefore,the GaN layer suffers from a stress due to large difference in lattice constants and thermal expansion coefficients between the GaN and sapphire.To improve the quality of devices,the epitaxial lateral overgrowth(ELO) technique is applied to GaN.ELO-GaN on patterned SiO_2/GaN/α-Al_2O_3 substrate is grown by metalorganic chemical vapor deposition(MOCVD).First,a high quality 3 μm thick layer of GaN is grown by MOCVD.Next,standard deposition and photolithographic techniques are employed to prepare a set of parallel SiO_2 stripes oriented along a(〈11-00〉) GaN crystal direction separated by window areas which expose the underlying GaN.A second deposition of GaN onto this patterned substrate is then initiated.During the initial GaN growth,the SiO_2 stripes function as nonwettable surfaces and no GaN deposition occurs on them.However,once the GaN film growth from the window stripes reaches the tops of the SiO_2 stripes,epitaxial lateral overgrowth of GaN commences.The GaN thickness of the second step growth is about 10 μm.The results of a systematic study of the ELO-GaN on sapphire are reported.Atomic force microscopy(AFM) images showed that the surface of ELO-GaN is smooth and that there are linear-configuration hillocks in the middle of mask region,which are caused by the misorientation of crystalline when the ELO-GaN coalesce above the masks.The X-ray diffraction(XRD) curve revealed that the tilts in the(〈11-20〉) direction between GaN in window regions and mask regions are about 1.2°.Raman scattering spectrum revealed that the stress in the mask region is smaller than that in the window region and also the quality of GaN is much higher in the mask region.As a result,the quality of GaN crystalloid is effectively improved by MOCVD using the ELO technique.

GaN Epitaxial Layers Grown on Multilayer Graphene by MOCVD

Growth of Gallium Nitride Films on Multilayer Graphene Template Using Plasma-Enhanced Atomic Layer Deposition

Epitaxial Lateral Overgrowth of High Quality GaN by MOCVD

Study on Nucleation and Growth Mode of GaN on Patterned Graphene by Epitaxial Lateral Overgrowth

Van Der Waals Coherent Epitaxy of GaN and InGaN/GaN Multi-Quantum-well Via a Graphene Inserted Layer

High-quality GaN grown on nitrogen-doped monolayer graphene without an intermediate layer

Epitaxial Growth of High-Quality GaN Films Based on Bilayer Graphene

Understanding the Growth Mechanism of GaN Epitaxial Layers on Mechanically Exfoliated Graphite.

Stress Study of GaN Grown on Serpentine-Channels Masked Si(111) Substrate by MOCVD

Remote Epitaxy and Exfoliation of GaN Via Graphene

Growth studies of m -GaN layers on LiAlO 2 by MOCVD

Epitaxial Lateral Overgrowth of GaN Using Hexagonal Patterned PECVD and Wet Transferred Graphene Masks by MOCVD

Growth of GaN Film on Graphene by HVPE

Microstructural and Optical Properties of Stress-Free GaN Films on Graphene Prepared by PECVD

Epitaxy N-polar GaN on vicinal Sapphire substrate by MOCVD

Growth mechanisms of GaN epitaxial films grown on ex situ low-temperature AlN templates on Si substrates by the combination methods of PLD and MOCVD

Molecular Beam Epitaxy of GaN Nanowires on Epitaxial Graphene

Growth of Highly Resistive GaN by MOCVD

MOCVD Growth of Device-Quality GaN on Sapphire Using a Three-Step Approach

Structural Characterization of Epitaxial Lateral Overgrowth GaN by MOCVD

Two-step growth of m-plane GaN epilayer on LiAlO2 (1 0 0) by metal-organic chemical vapor deposition