Abstract:In this paper, the processing parameters of growing GaN epilayer by hydride vapor phase epitaxy are optimized The influences of the low-temperature (LT) nucleation layer growth time, WM precursor ratio and the growth temperature on GaN layer are investigated by the high-resolution X-ray diffraction (HRXRD) signature for the asymmetric and symmetric reflections. The investigation finds that the LT-nucleation layer not only supplies the nucleation centers having good crystal quality, but also promotes the lateral growth of the sequent high temperature (HT) growth. The optimal LT nucleation layer growth time, WEI precursor ratio and the growth temperature can effectively enhance lateral growth to reduce the crystal defects and are favorable to converting the growth mechanism from threedimension to two-dimension in HT growth. The structural and optoelectronic properties of the as-grown GaN layer with a thickness of 15 um at the optimal parameters are studied by scanning electron microcopy, atomic force microscopy (AFM), HRXRD, Raman spectra, and photoluminescence (PL) measurements. X-ray rocking curves show that the full widths at half maximum of (002) and (102) are 317 and 343 arcsec, respectively. The surface roughness (rms: root mean square) is 0.334 nm detected using AFM. These characteristics show that the sample has good lattice quality and smooth surface morphology. In PL spectrum, the near band edge emission is dominated by emission from excitons bound to neutral donors (D X) near 3.478 eV with 11 meV blue-shift and the yellow band emission is very weak. The results indicate that the GaN layer has good crystal quality and excellent optoelectronic properties, but a little biaxial in-plane compressive strain also exists in it due to the lattice and thermal mismatch.

Growth Mechanism of Exfoliable GaN by Van Der Waals Epitaxy on Wrinkled Hexagonal Boron Nitride

Wafer-Scale Controlled Exfoliation of Metal Organic Vapor Phase Epitaxy Grown Ingan/Gan Multi Quantum Well Structures Using Low-Tack Two-Dimensional Layered H-Bn

Growth of GaN epitaxial films on polycrystalline diamond by metal-organic vapor phase epitaxy

Van Der Waals Epitaxial AlGaN/GaN Growth on Hexagonal BN Via Two-Dimensional N-induced Dislocation Slip

Impact of GaN Transition Layers in the Growth of GaN Epitaxial Layer on Silicon

Understanding the Growth Mechanism of GaN Epitaxial Layers on Mechanically Exfoliated Graphite.

Growth model of van der Waals epitaxy of films: A case of AlN films on multilayer graphene/SiC.

Growth mechanisms of GaN epitaxial films grown on ex situ low-temperature AlN templates on Si substrates by the combination methods of PLD and MOCVD

Growth of Freestanding Gallium Nitride (gan) Through Polyporous Interlayer Formed Directly During Successive Hydride Vapor Phase Epitaxy (HVPE) Process

Wafer‐Scale Transferrable GaN Enabled by Hexagonal Boron Nitride for Flexible Light‐Emitting Diode

Van Der Waals Coherent Epitaxy of GaN and InGaN/GaN Multi-Quantum-well Via a Graphene Inserted Layer

Remote Epitaxy and Exfoliation of GaN Via Graphene

Optimization of the Parameters for Growth High-Qulity Gan Film by Hydride Vapor Phase Epitaxy

Wafer Level Quasi-Van Der Waals Epitaxy of AlGaN/GaN Heterojunctions on Sp2-Bonded BN Controlled by AlN Nucleation Layer

Epitaxial Growth of High-Quality GaN Films Based on Bilayer Graphene

Growth of GaN Quasi‐substrates by Hydride Vapor Phase Epitaxy

The Growth of High-Quality and Self-Separation GaN Thick-Films by Hydride Vapor Phase Epitaxy

Low-temperaturevan Der Waals Epitaxy of GaN Films on Graphene Through AlN Buffer by Plasma-Assisted Molecular Beam Epitaxy

Controlled exfoliation of wafer-scale single-crystalline AlN film on MOCVD-grown layered h-BN

High-quality crack-free GaN epitaxial films grown on Si substrates by a two-step growth of AlN buffer layer

Growth of 2D GaN Single Crystals on Liquid Metals