Abstract:As the third generation semiconductor material,gallium nitride(GaN)is widely used in electronic devices and optoelectronic devices due to its excellent characteristics such as wide band gap,high breakdown field strength,high electron mobility,outstanding thermal conductivity,and direct band gap.However,it is difficult to obtain high quality single crystal GaN thin films due to the mismatch between GaN material and substrate in early phase of preparation.Until the two-step growth method is proposed,in which the nucleation layer of aluminum nitride(AlN)is firstly grown on the substrate at low temperature,and then GaN is grown at high temperature,the quality of GaN is greatly improved.Nowadays,AlN nucleation layers are fabricated via magnetron sputtering and molecular beam epitaxy,etc.To further improve the quality of GaN crystals,this study used plasma-enhanced atomic layer deposition(PEALD)method to prepare AlN nucleation layers for the epitaxial growth of GaN on a two-inch c-plane sapphire substrate.Compared with the magnetron sputtering method and molecular beam epitaxy method,the crystal quality of AlN prepared by PEALD method displays advantages of simple process,low cost and high yield.Measurements on deposited AlN films show that the deposition rate is 0.1 nm/cycle and the films have island-like structures varying with its thickness.Epitaxial GaN measurements show that GaN epitaxial layer can obtain the smoothest surface with a root mean square roughness of 0.272 nm,the best optical properties,and the lowest dislocation density when AlN is deposited with a thickness of 20.8 nm.In conclusion,a new method of epitaxial single crystal GaN on AlN prepared by PEALD has been built with optimal deposition at 20.8 nm of AlN to obtain high quality GaN thin films,it can be used to prepare high electron mobility transistors and light-emitting diodes.

Epitaxial Growth of High-Quality GaN Films Based on Bilayer Graphene

High-quality GaN grown on nitrogen-doped monolayer graphene without an intermediate layer

Direct Growth of GaN on Sapphire with Non-Catalytic CVD Graphene Layers at High Temperature

Epitaxial Growth Mechanisms of Single-Crystalline GaN on Single-Crystalline Graphene

High-quality crack-free GaN epitaxial films grown on Si substrates by a two-step growth of AlN buffer layer

Understanding the Growth Mechanism of GaN Epitaxial Layers on Mechanically Exfoliated Graphite.

Epitaxy Single Crystal GaN on AlN Prepared by Plasma-enhanced Atomic Layer Deposition

Study on Nucleation and Growth Mode of GaN on Patterned Graphene by Epitaxial Lateral Overgrowth

Design and Epitaxial Growth of Quality-Enhanced Crack-Free GaN Films on AlN/Al Heterostructures and Their Nucleation Mechanism

Growth mechanisms of GaN epitaxial films grown on ex situ low-temperature AlN templates on Si substrates by the combination methods of PLD and MOCVD

Homo-epitaxial Growth of High Crystal Quality GaN Thin Films by Plasma Assisted–molecular Beam Epitaxy

Epitaxial Growth of High-Quality GaN Films on Various Oxide Substrates

Growth of Gallium Nitride Films on Multilayer Graphene Template Using Plasma-Enhanced Atomic Layer Deposition

Investigation of GaN with Low Threading Dislocation Density Grown on Graphene/Sputtered AlN Composite Substrate

GaN Epitaxial Layers Grown on Multilayer Graphene by MOCVD

Low-temperaturevan Der Waals Epitaxy of GaN Films on Graphene Through AlN Buffer by Plasma-Assisted Molecular Beam Epitaxy

Growth of GaN Film on Graphene by HVPE

High quality GaN epilayers grown on Si (1 1 1) with thin nonlinearly composition-graded AlxGa1-xN interlayers via metal-organic chemical vapor deposition

Improved nucleation of AlN on in situ nitrogen doped graphene for GaN quasi-van der Waals epitaxy

A new approach to epitaxially grow high-quality GaN films on Si substrates: the combination of MBE and PLD

Pulsed-mode metalorganic vapor-phase epitaxy of GaN on graphene-coated c-sapphire for freestanding GaN thin films