Abstract:AlN films grown on sputter-deposited and annealed AlN buffer layer by high temperature hydride vapor phase epitaxy (HVPE) have been fabricated and structurally characterized. The crystalline quality and surface morphology of as-grown AlN films with various V/III ratios were studied and compared. The XRD results showed that the crystalline quality of the AlN film could be optimized when the growth V/III ratio was 150. At the same time, the full width at half-maximum (FWHM) values of (0002)- and (101 over bar 2<i)-plane were 64 arcsec and 648 arcsec, respectively. As revealed by AFM, the AlN films grown with higher V/III ratios of 150 and 300 exhibited apparent hillock-like surface structure due to the low density of screw threading dislocation (TD). The defects microstructure and strain field around the HVPE-AlN/sputtered-AlN/sapphire interfaces have been investigated by transmission electron microscopy (TEM) technique combined with geometric phase analysis (GPA). It was found that the screw TDs within AlN films intend to turn into loops or half-loops after originating from the AlN/sapphire interface, while the edge ones would bend first and then reacted with others within a region of 400 nm above the interface. Consequently, part of the edge TDs propagated to the surface vertically. The GPA analysis indicated that the voids extending from sapphire to HVPE-AlN layer were beneficial to relax the interfacial strain of the best quality AlN film grown with a V/III ratio of 150.

Evolution of the surface morphology of AlN epitaxial film by HVPE

Homoepitaxy Growth of High‐Quality AlN Film on MOCVD AlN Template by Hydride Vapor Phase Epitaxy

Influence of Thickness on Strain State and Surface Morphology of Aln Grown by Hvpe

Preparation Of Aln Film Grown On Sputter-Deposited And Annealed Aln Buffer Layer Via Hvpe

Porous AlN Films Grown on C-face SiC by Hydride Vapor Phase Epitaxy

Evolution of microstructure, stress and dislocation of AlN thick film on nanopatterned sapphire substrates by hydride vapor phase epitaxy

The Fabrication of AlN by Hydride Vapor Phase Epitaxy

Porous AlN films grown on C-face SiC by HVPE

Effect of Flux Rate on AlN Epilayers Grown by Hydride Vapor Phase Epitaxy

Surface Preparation and Homoepitaxial Deposition of AlN on (0001)-Oriented AlN Substrates by Metalorganic Chemical Vapor Deposition

Growth model of van der Waals epitaxy of films: A case of AlN films on multilayer graphene/SiC.

Lateral Epitaxial Overgrowth of Aluminum Nitride on Patterned Silicon Carbide Substrates by Hydride Vapor Phase Epitaxy

Effect of V–III Ratio‐Based Growth Mode on the Surface Morphology, Strain Relaxation, and Dislocation Density of AlN Films Grown by Metal‐Organic Chemical Vapor Deposition

Growth Evolution Of Aln Films On Silicon (111) Substrates By Pulsed Laser Deposition

Epitaxy of (11–22) AlN Films on a Sputtered Buffer Layer with Different Annealing Temperatures via Hydride Vapour Phase Epitaxy

AlN Thin Film Grown on Different Substrates by Hydride Vapor Phase Epitaxy

Influence of sapphire substrate miscut on the surface morphology and microstructure of AlN films grown by HVPE

Structure and Optical Properties of AlN Crystals Grown by Metal Nitride Vapor Phase Epitaxy with Different V/III Ratios.

Van Der Waals Epitaxial AlGaN/GaN Growth on Hexagonal BN Via Two-Dimensional N-induced Dislocation Slip

Heteroepitaxy of N-polar AlN on C-face 4H-SiC: Structural and optical properties

Effect of H Plasma Treatment of the Nucleation Layer on AlN Epitaxy in Microwave Plasma Chemical Vapor Deposition