Abstract:Reliable and controllable growth of two-dimensional (2D) hexagonal boron nitride (h-BN) is essential for its wide range of applications. Substrate engineering is one of the critical factors that influence the growth of the epitaxial h-BN films. Here, we report the growth of monolayer h-BN on Ni (111) substrates incorporated with oxygen atoms via molecular beam epitaxy. It was found that the increase of incorporated oxygen concentration in the Ni substrate through a pretreatment process prior to the h-BN growth step would have an adverse effect on the morphology and growth rate of 2D h-BN. Under the same growth condition, h-BN monolayer coverage decreases exponentially as the amount of oxygen incorporated into Ni (111) increases. Density functional theory (DFT) calculations and climbing image nudged elastic band (CI-NEB) method reveal that the substitutional oxygen atoms can increase the diffusion energy barrier of B and N atoms on Ni (111) thereby inhibiting the growth of h-BN films. As-grown large-area h-BN monolayer films and fabricated Al/h-BN/Ni (MIM) nanodevices were comprehensively characterized to evaluate the structural, optical and electrical properties of high-quality monolayers. Direct tunneling mechanism and high breakdown strength of ~11.2 MV/cm are demonstrated for the h-BN monolayers grown on oxygen-incorporated Ni (111) substrates, indicating that these films have high quality. This study provides a unique example that heterogeneous catalysis principles can be applied to the epitaxy of 2D crystals in solid state field. Similar strategies can be used to grow other 2D crystalline materials, and are expected to facilitate the development of next generation devices based on 2D crystals.

Growth mechanism of AlN on hexagonal BN/sapphire substrate by metal–organic chemical vapor deposition

Growth of High Quality AlN on Sapphire with Multi-Growth Approaches

Epitaxial AlN film with improved quality on Si (111) substrates realized by boron pretreatment via MOCVD

MBE Growth of AlN Nanowires on Si Substrates by Aluminizing Nucleation

EPITAXIAL GROWTH OF AlN AND NbN FILMS ON (111) MgO SUBSTRATE

Wafer Level Quasi-Van Der Waals Epitaxy of AlGaN/GaN Heterojunctions on Sp2-Bonded BN Controlled by AlN Nucleation Layer

Suppression of Stress and Cracks in the Epitaxy of AlN by MOCVD Through a Hexagonal BN Nucleation Layer

Epitaxial Growth of AlN Films on Sapphire Via a Multilayer Structure Adopting a Low- and High-Temperature Alternation Technique

Epitaxial Growth And Structural Analysis Of Aln/Gan Heterostructures

Surface Morphology of AlN Nucleation Layer Grown on Si by MOCVD

Graphene-assisted growth of high-quality AlN by metalorganic chemical vapor deposition

Controlled exfoliation of wafer-scale single-crystalline AlN film on MOCVD-grown layered h-BN

Defect structure of high temperature hydride vapor phase epitaxy–grown epitaxial (0 0 0 1) AlN/sapphire using growth mode modification process

AlN Thin Film Grown on Different Substrates by Hydride Vapor Phase Epitaxy

Mocvd Growth and Characterization of Epitaxial Alxga1-Xn Films

Growth of High Al Content AlGaN Epilayer by MOCVD

Gas-Phase Chemical Reaction Mechanism in the Growth of AlN during High-Temperature MOCVD: A Thermodynamic Study

Epitaxial Growth Mechanism of Pulsed Laser Deposited AlN Films on Si (111) Substrates

Adjustment of Al Atom Migration Ability and Its Effect on the Surface Morphology of AlN Grown on Sapphire by Metal–organic Chemical Vapor Deposition

The role of oxygen incorporation in Ni (111) substrates on the growth of hexagonal boron nitride monolayers

Growth and Defects of AlN Epilayers by RF Molecular Beam Epitaxy