Abstract:Gallium arsenide (GaAs) nanowires are epitaxially grown on an N-type Si (111) substrate by molecular beam epitaxy according to self-catalysis growth mechanism. Testing the grown nanowires by scanning electron microscope, it is found that the nanowires have high verticality and good uniformity in length and diameter. Variable temperature photoluminescence (PL) spectroscopy is used on nanowires. The test results show that the two luminescence peaks P1 and P2 at 10 K are located at 1.493 eV and 1.516 eV, respectively, and it is inferred that it may be the luminescence caused by WZ/ZB miscible structure and the free exciton luminescence peak. These two peaks present red-shift with temperature increasing. The temperature change curve is obtained by fitting the Varshni formula. The variable power PL spectroscopy test finds that the peak position of P1 position is blue shifted with power increasing, but the peak position of the P2 remains unchanged. By fitting, it is found that the P1 peak position is linearly related to power to the power of 1/3, and it is judged that it may be type-II luminescence caused by WZ/ZB mixed phase structure. At the same time, the peak position of the P2 position is fitted and parameter alpha approximately equals 1.56, therefore P2 is a free exciton luminescence. A Raman spectrum test is performed on the nanowires, and an E-2 phonon peak unique to the GaAs WZ structure is found from the spectrum. It is proved that the grown nanowires possess WZ/ZB mixed phase structures, and the hybrid phase structure of nanowires is more intuitively observed by high resolution transmission electron microscopy.

Raman Spectroscopy and Structure of Crystalline Gallium Phosphide Nanowires.

Synthesis and Microstructure of Gallium Phosphide Nanowires

Raman Spectroscopy of Nanocrystalline Gan Synthesized by Arc Plasma

Crystal structure and optical properties of GaAs nanowires

Anticrossing of Axial and Planar Surface-Related Phonon Modes in Raman Spectra of Self-Assembled Gan Nanowires

Size dependence of the bulk and surface phonon modes of gallium arsenide nanowires as measured by Raman Spectroscopy

Electronic structures of free-standing nanowires made from indirect bandgap semiconductor gallium phosphide

Surface Optical Phonions In Gallium Phosphide Nanowires

Raman Scattering Studies of Individual Polar Semiconducting Nanowires: Phonon Splitting and Antenna Effects

Microstructure and Micro-Raman Studies of Nitridation and Structure Transition of Gallium Oxide Nanowires

Raman Spectrum of Array-Ordered Crystalline Silicon Nanowires

Asymmetric Broadening Of A1 (Lo) Raman Peak Of Nanocrystal Aggregated Gan Nanowires

418 Cm(-1) Raman Scattering From Gallium Nitride Nanowires: Is It A Vibration Mode Of N-Rich Ga-N Bond Configuration?

Gallium Oxide Nanowire with Twinning Structure and Its Photoluminescence Property

Direct Measure of Strain and Electronic Structure in Gaas/Gap Core-Shell Nanowires

Oxide-Assisted Growth and Optical Characterization of Gallium-Arsenide Nanowires

Fabrication and Photoluminescence of Ordered GaN Nanowire Arrays

Raman Scattering As a Probe of Phonon Confinement and Surface Optical Modes in Semiconducting Nanowires

Phase Transition Induced Vertical Alignment of Ultrathin Gallium Phosphide Nanowire Arrays on Silicon by Chemical Beam Epitaxy

Selective growth and characterization of gallium nitride nanowires through an N-Ga2O3 layer

Formation of Gallium Nitride Crystal Loops on Silicon (111) Substrate