Abstract:This work examines the carbon defects associated with recently reported and novel peaks of infrared (IR) absorption and Raman scattering appearing in GaN crystals at carbon ($^{12}C$) doping in the range of concentrations from $3.2*10^{17}$ to $3.5*10^{19} cm^{-3}$. 14 unique vibrational modes of defects are observed in GaN samples grown by hydride vapor phase epitaxy (HVPE) and then compared with defect properties predicted from first-principles calculations. The vibrational frequency shift in two $^{13}C$ enriched samples related to the effect of the isotope mass indicates six distinct configurations of the carbon-containing point defects. The effect of the isotope replacement is well reproduced by the density functional theory (DFT) calculations. Specific attention is paid to the most pronounced defects, namely tri-carbon complexes($C_N=C=C_N$) and carbon substituting for nitrogen $C_N$. The position of the transition level (+/0) in the bandgap found for $C_N=C=C_N$ defects by DFT at 1.1 eV above the valence band maximum, suggest that $(C_N=C=C_N)^+$ provides compensation of ${C_N}^-$. $C_N=C=C_N$ defects are observed to be prominent, yet have high formation energies in DFT calculations. Regarding ${C_N}$ defects, it is shown that the host Ga and N atoms are involved in the defect's delocalized vibrations and significantly affect the isotopic frequency shift. Much more faint vibrational modes are found from di-atomic carbon-carbon and carbon-hydrogen (C-H) complexes. Also, we note changes of vibrational mode intensities of $C_N$, $C_N=C=C_N$, C-H, and $C_N-C_i$ defects in the IR absorption spectra upon irradiation in the defect-related UV/visible absorption range. Finally, it is demonstrated that the resonant enhancement of the Raman process in the range of defect absorption above 2.5 eV enables the detection of defects at carbon doping concentrations as low as $3.2*10^{17} cm^{-3}$.

418 Cm(-1) Raman Scattering From Gallium Nitride Nanowires: Is It A Vibration Mode Of N-Rich Ga-N Bond Configuration?

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Raman Spectroscopy of Nanocrystalline Gan Synthesized by Arc Plasma

Raman Spectroscopy and Structure of Crystalline Gallium Phosphide Nanowires.

Isotopic Heft on the B1 l Silent Mode in Ultra-Narrow Gallium Nitride Nanowires

Localized tip enhanced Raman spectroscopic study of impurity incorporated single GaN nanowire in the sub-diffraction limit

Microstructure and Micro-Raman Studies of Nitridation and Structure Transition of Gallium Oxide Nanowires

Size dependence of the bulk and surface phonon modes of gallium arsenide nanowires as measured by Raman Spectroscopy

Raman scattering probe of anharmonic effects due to temperature and compositional disorder in GaNxAs1−x

Vibrating modes and dispersive spectra of full polar optical phonons in wurtzite GaN/AlGaN rectangular nanowires

Raman scattering spectra of GaN grown by MOCVD

Surface Optical Phonions In Gallium Phosphide Nanowires

Two Local Vibrational Modes Related to Hydrogen in GaN

Raman Scattering and Ferromagnetism of (ga, Mn)N Films Grown by MOCVD

Spectroscopic characterizations of individual single-crystalline GaN nanowires in visible/ultra-violet regime.

Local Vibration at the Surface of a Ge Nanocrystal Embedded in a Silicon Oxide Matrix

Raman Scattering Study of In <sub> <i>x</i> </sub> Ga <sub> 1− <i>x</i> </sub> N Alloys with Low Indium Compositions

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Micro-Raman investigation of GaN nanowires prepared by direct reaction Ga with NH3

Fingerprints of carbon defects in vibrational spectra of gallium nitride (GaN) consider-ing the isotope effect

Raman scattering study of In xGa 1-xN alloys with low indium compositions