Study on Raman scattering spectroscopy of Mn-doped GaN grown by the ammonothermal method

Wenhao Lu,Tengkun Li,Guoqiang Ren,Zhenghui Xia,Kaihe Xie,Shaozhe Li,Liangkun Shen,Ke Xu

DOI: https://doi.org/10.1039/d4ce00093e

IF: 3.756

2024-01-01

CrystEngComm

Abstract:Mn-doped GaN crystals of a -plane and (11−22) plane were grown by the ammonothermal method.

chemistry, multidisciplinary,crystallography

What problem does this paper attempt to address?

Optical and Structural Properties of Mn-Doped GaN Grown by Metal Organic Chemical Vapour Deposition

Xugao Cui,Rong Zhang,Tao Zhang,Xin Li,Xiangqian Xiu,Zili Xie,Yi Zheng

DOI: https://doi.org/10.1088/0256-307x/26/3/038103

2009-01-01

Abstract:Mn-doped GaN epitaxial films were grown by metal organic chemical vapour deposition (MOCVD). Micro-structural properties of films are investigated using Raman scattering. It is found that with increasing Mn-dopants levels, longitudinal optical phonon mode A1 (LO) of films is broadened and shifted towards lower frequency. This phenomenon possibly derives from the difference in bonding strength between Ga-N pairs and Mn-N pairs in host lattice. In addition, optical properties of films are investigated using cathodoluminescence and absorption spectroscopy. Mn-related both emission band around 3.0eV and absorption bands around 1.5 and 2.95eV are observed. By studies on structural and optical properties of Mn-doped GaN, we find that Mn ions substitute for Ga sites in host lattice. However, carrier-mediated ferromagnetic exchange seems unlikely due to deep levels of Mn acceptors.
Studies on Structural and Magnetic Properties in Mn-Doped GaN

Cui Xugao,Zhang Rong,Tao Zhikuo,Li Xin,Xiu Xiangqian,Xie Zili

2008-01-01

Abstract:Mn-doped GaN epitaxial films(Ga1-xMnxN)were grown on sapphire [0001] by metal organic chemical vapor deposition(MOCVD).Mn concentration was determined by energy dispersive spectrometry(EDS).For Ga1-xMnxN with x up to 0.027,no secondary phases except for GaN were detected by high resolution X-ray diffractometer(XRD).Raman scattering spectra shows that the longitudinal optical phonon mode A1(LO)of Ga1-xMnxN shifts towards lower frequency with increasing Mn concentration due to substitutional Mn incorporation.Room temperature electron spin resonance(ESR)measurements are performed and highly anisotropic six-fold hyperfine line indicates that the ionized Mn2+ substitutes for Ga3+ ions.However,superconductor quantum interference device(SQUID)magnetometry reveals that all homogenous Mn-doped GaN films show paramagnetic-like behaviors.From Brillouin function fit and ESR spectra,it is concluded that Mn ions are present as isolated paramagnetic centers.
Study on Preparation and Properties of Mn-Doped GaN Powders

Guo Junmei,Liu Qinghua,Zhao Ruibin,Li Xiuling,Zhou Hongjuan,Hou Denglu

DOI: https://doi.org/10.3969/j.issn.1003-353X.2008.06.007

2008-01-01

Abstract:GaMnN powders with Mn mass fraction from 0% to 7% are prepared by the sol-gel method.The structural characteristics of Mn doped GaN powders was studied by X-ray diffraction(XRD).It indicates that all samples are hexagonal wurtzite structure without any secondary phases.The lattice constant calculated from XRD results increases linearly with the increasing of Mn mass fraction.Photoluminescence spectra of all samples show redshift in the peak position of the UV PL(P1)with the increasing of Mn doping,indicating that the band gap getts narrow.XPS measurement shows that the doped Mn ion in(Ga,Mn)N films is in the divalent state.Magnetism measurements reveal that all samples are paramagnetism at 5 K,and Curie-Weiss temperature is negative.
Raman Scattering and Ferromagnetism of (ga, Mn)N Films Grown by MOCVD

Xuelin Yang,Jiejun Wu,Zhitao Chen,Yaobo Pan,Yan Zhang,Zhijian Yang,Tongjun Yu,Guoyi Zhang

DOI: https://doi.org/10.1016/j.ssc.2007.05.012

IF: 1.934

2007-01-01

Solid State Communications

Abstract:In this letter, Raman spectra for a series of (Ga, Mn)N samples with different Mn concentration grown by MOCVD have been investigated. A new vibrational mode at 577 cm(-1) obtained is assigned to the local vibrational mode (LVM) of Mn substituting the Ga site. Another mode at 667 cm(-1) arises from vibrational mode of nitrogen vacancies-related defects. It is found that Mn doping increases the lattice disorder and other built-in defects such as the nitrogen vacancies. The room temperature ferromagnetism is not only dependent on the substitutional Mn content but also strongly related to these lattice disorder and negative defects in (Ga, Mn)N films. (c) 2007 Elsevier Ltd. All rights reserved.
Raman scattering spectra of GaN grown by MOCVD

YuZhen Tong,Guoyi Zhang,ZiLiang Xu,XiaoZhong Dang,Jingjing Wang,Sixuan Jing,Shumin Wang,Hongdu Liu

1996-01-01

Abstract:The Raman spectra in the backscattering geometry configurations of GaN grown by MOCVD with phenylhydrazine as nitrogen source on the substrate of GaAs (001), Al2O3(0001) and Si(111) were measured and compared. The Al(LO), Al(TO), EL(LO), EL(TO) and E2 modes of ��-GaN were observed. In combination with the X-ray diffraction spectra, the difference in Raman scattering spectra of GaN/GaAs sample with different structure phases caused by different growth process was analyzed, and it was found that the Raman spectra of GaN depend on the structure phase of its epitaxial layer, its completeness and technological processing, which can then be used as an useful measure to detect the structural characteristics of GaN epitaxial layer. Besides, the phonon mode of 741cm-1, which may come from ��-GaN, was also observed on the GaN sample with small amount of ��-GaN.
Structural And Magnetic Properties In Mn-Doped Gan Grown By Metal Organic Chemical Vapor Deposition

Xugao Cui,ZhiKuo Tao,Rong Zhang,Xuefei Li,Xiangqian Xiu,Zili Xie,Shulin Gu,Ping Han,Yi Shi,Youdou Zheng

DOI: https://doi.org/10.1063/1.2909545

IF: 4

2008-01-01

Applied Physics Letters

Abstract:Mn-doped GaN epitaxial films (Ga1-xMnxN) were grown on sapphire (0001) by metal organic chemical vapor deposition. Mn concentration was determined by energy dispersive spectrometry. For Ga1-xMnxN with x up to 0.027, no secondary phases except for GaN were detected by high resolution x-ray diffractometer. Raman scattering spectra show that the longitudinal optical phonon mode A(1)(LO) of Ga1-xMnxN shifts toward lower frequency with increasing Mn concentration due to substitutional Mn incorporation. Electron spin resonance (ESR) measurements were performed and highly anisotropic sixfold hyperfine line indicates that the ionized Mn2+ substitutes for Ga3+ ions. However, magnetometry reveals that all homogenous Ga1-xMnxN show paramagneticlike behaviors. From Brillouin function fit and ESR spectra, it is concluded that Mn ions are present as isolated paramagnetic centers. (c) 2008 American Institute of Physics.
Study on the Raman Scattering Measurements of Mn Ion Implanted Gan

Y. H. Zhang,L. L. Guo,W. Z. Shen

DOI: https://doi.org/10.1016/j.mseb.2006.03.014

2006-01-01

Abstract:We investigate the temperature dependent Raman spectra of Mn implanted (Ga,Mn)N samples with five Mn implantation doses. A small shoulder at 572.4cm−1 on the high energy side of the main Raman peak E2H has been attributed to the Mn-related local vibrational mode (LVM). It is found that with the increase of Mn implantation dose the intensity ratio of LVM to that of the E2H(ILVM/IE2H) increases at first and tends to saturate at high implantation dose. In addition, at high temperature or after rapid thermal anneal treatment, the value of ILVM/IE2H decreases significantly, explaining the reason why it is difficult to observe Mn-related LVM reported in the literature.
Raman Scattering of GaN and Mg-doped GaN Films Grown by MOCVD

WANG Rui-min,CHEN Guang-de,LIN J Y,JIANG H X

DOI: https://doi.org/10.3321/j.issn:1000-7032.2005.02.018

2005-01-01

Chinese Journal of Luminescence

Abstract:Raman scattering spectra of GaN and Mg-doped GaN films grown by metal-organic chemical-vapor deposition (MOCVD) on sapphire substrate are investigated. Some weak peaks are also observed in two spectra besides the allowed E 2 and A 1(LO) phonon modes in Z(X-)Z backscattering geometry. The origins of these peaks are discussed and the differences between two spectra are compared. Two peaks at 640 and 660 cm -1 are observed both in the spectra of GaN and Mg-doped GaN samples. The 640 cm -1 peak is attributed to an overtone process of the highest acoustic-phonon branch at the zone boundary (L point). The peak at 660 cm -1 is attributed to the optical-phonon branch at the zone boundary or the local vibrational mode induced by defect. In the spectrum of Mg-doped GaN sample there is a broad feature near the two peaks. It is suggested that the broad feature arises from the local vibrational mode of Mg-N bond which superposed on the two peaks mentioned above or arises from defect-induced broaden. Two additional peaks at 276 cm -1 and 376 cm -1 are also observed in the spectrum of Mg-doped GaN sample. The peak at 276 cm -1 is the local vibrational mode of Mg-N bond and the peak at 376 cm -1 is the local vibrational mode of impurity- defect complex. The frequency of E 2 mode in Mg-doped GaN shifted to low energy side compared with GaN sample, and located at 568 cm -1 at room temperature. This indicated that the relaxation of residual stress existed in Mg-doped sample. The stress relaxation is contributed to Mg-induced generation of dislocation. Furthermore, electron-phonon interaction also can induce frequency shift of E 2 mode.
Temperature Dependence of Raman Scattering in GaMnN

L. L. Guo,Y. H. Zhang,W. Z. Shen

DOI: https://doi.org/10.1063/1.2364472

IF: 4

2006-01-01

Applied Physics Letters

Abstract:A detailed investigation of temperature-dependent Raman scattering has been carried out on ion-implanted GaMnN with different Mn doses. The observed frequency downshift and linewidth broadening with increasing temperature can be well described by a model taking into account the contributions of the thermal expansion and decay of optical phonons into two and three phonons of lower energy. The authors have demonstrated clear dependence of the phonon frequency, linewidth, and decay process on the Mn concentration in GaMnN, which is found to be closely related to the crystal structure.
Optical and Structural Properties of Mn-Implanted GaN Films

Xu J.,Li J.,Zhang R.,Xiu X.Q.,Lu D.Q.,Gu S.L.,Shen B.,Shi Y.,Zheng Y. D.

DOI: https://doi.org/10.1557/proc-693-i3.43.1

2001-01-01

MRS Proceedings

Abstract:The optical and structural properties of Mn-implanted GaN films have been investigated. The films studied were grown by metal organic chemical vapor deposition (MOCVD), with Mn implanted in 150 KeV, which can offer many distinguished advantages compared with other doping methods. A new energy band with a minimum at 2.9 eV in the reflectance spectra has been observed. The yellow band emission was greatly decreased according to the result of photoluminescence. The structure analysis revealed that the Mn doped sample has good crystal quality as the pure GaN after annealed. And further discussions on the role of Mn in GaN: Mn films have been presented.
Study on Raman Spectra of GaMnAs

BS Ma,WJ Wang,FH Su,JJ Den,CP Jiang,HL Liu,K Ding,JH Zhao,GH Li

DOI: https://doi.org/10.3321/j.issn:1001-9014.2006.03.012

2006-01-01

JOURNAL OF INFRARED AND MILLIMETER WAVES

Abstract:Raman spectra of diluted magnetic semiconductor GaMnAs alloy were reported. The coupled plamon-LO-phonon ( CPLP) mode has LO-like polarization properties. With increasing Mn concentration, the CPLP mode shifts to low frequency. The hole density in the alloy was determined from the ratio of the intensity of the CPLP mode to that of the unscreened LO mode in the depletion layer. The hole density increases with the increase of the Mn composition. The Raman spectra of GaMnAs alloy were measured at different temperature. It is confirmed that the hole density in the alloy increases with the increase of the temperature.
Study on MOCVD-Grown Mg-Doped GaN by Annealing Treatment

Junxue Ran,Xiaoliang Wang,Guoxin Hu,Junxi Wang,Jianping Li,Yiping Zeng,Pumin Li

DOI: https://doi.org/10.3321/j.issn:0253-4177.2005.03.013

2005-01-01

Abstract:Mg-doped GaN epilayers are grown on 50 mm basal plane sapphire substrates by metalorganic chemical vapor deposition. Thermal annealing treatments are carried out on the samples and Hall, double crystal X-ray diffraction, and photoluminescence (PL) spectroscopy measurements are performed on the as-grown and annealed samples, respectively. The Hall measurements show that after annealing at 950°C, the sample has a hole concentration of 5 × 1017 cm-3 and a resistivity of 2.5 Ω·cm. The X-ray (0002) diffraction measurement shows that the as-grown and annealed samples have the same full width at half maximum of 4arcmin. A dominant PL peak around 2.85 eV is observed at room temperature PL spectra both on the as-grown and the annealed samples, and the intensity of this PL peak of the annealed samples is eight times stronger than that of the as-grown ones. It can be concluded that large numbers of Mg atoms passivated by H atoms in the as-grown GaN epilayers are electrically activated by the annealing treatment.
Research on the Mn-implanted GaN with Ferromagnetism at Room Temperature

J Xu,J Li,R Zhang,XQ Xiu,DQ Lu,HQ Yu,SL Gu,B Shen,Y Shi,YD Ye,YD Zheng

DOI: https://doi.org/10.1016/s0925-3467(03)00079-x

IF: 3.754

2003-01-01

Optical Materials

Abstract:The Mn-implanted GaN with ferromagnetism at room temperature has been prepared successfully. The optical and structural properties of Mn-implanted GaN films have been investigated. The films studied were grown by metal organic chemical vapor deposition, with Mn implanted in 150 keV, which can offer many distinguished advantages compared with other doping methods. A new energy band with a minimum at 2.9 eV in the reflectance spectra has been observed. The yellow band emission was greatly decreased according to the result of photoluminescence. The results of vibrating sample magnetometer experiment proved the ferromagnetic properties of Mn-doped GaN at room temperature.
Nitrogen Vacancy Effects on the Ferromagnetism of Mn Doped GaN Films

B. Hu,B. Y. Man,M. Liu,C. Yang,C. S. Chen,X. G. Gao,S. C. Xu,C. C. Wang,Z. C. Sun

DOI: https://doi.org/10.1007/s00339-012-6900-z

2012-01-01

Abstract:The amorphous gallium nitride thin films doped with Mn were deposited by Laser assisted Molecular Beam Epitaxy (LMBE). After annealing at different NH 3 flow rates, the high-quality GaMnN crystalline films with different concentration of nitrogen vacancies ( V N ) were obtained, which were confirmed by the X-ray diffraction spectroscopy and Raman measurements. The magnetic behaviors of these films were also obtained to investigate the effects of nitrogen vacancies. It indicates that V N play a significant role in the origin of ferromagnetism. The stronger room-temperature ferromagnetism is given with the higher V N concentration when it is not beyond a critical concentration. Moreover, from our M ( T ) curves and Raman analysis, the films present high resistivity. The magnetism of films with high resistivity varies with concentration of nitrogen vacancies, which can be explained by the bound magnetic polarons (BMP) theory.
Growth behavior of ammonothermal GaN crystals grown on non-polar and semi-polar HVPE GaN seeds

Tengkun Li,Guoqiang Ren,Xujun Su,Jingjing Yao,Zixiang Yan,Xiaodong Gao,Ke Xu

DOI: https://doi.org/10.1039/c9ce00806c

IF: 3.756

2019-01-01

CrystEngComm

Abstract:In this work, GaN crystals were grown on non-polar and semi-polar HVPE GaN seeds by the basic ammonothermal method. The growth behaviors of various crystal planes were investigated. Different surface morphology regimes were observed with features including hillock-, slate- and elliptical sphere-like surfaces. The growth rates and evolution processes of various planes of the as-grown GaN crystals were characterized using scanning electron microscopy (SEM) and cathodoluminescence (CL) measurements. Our results suggest that the growth rates of identical crystal planes grown on HVPE seeds with different orientations are almost the same. The dominant facets of these GaN crystals were ultimately found to be non-polar m-planes, {10-11} semi-polar planes and polar (000-1) planes by analyzing the morphological evolution of the crystal shape using the kinetic Wulff's rule.
Structural, Optical and Magnetic Properties of Ga1−xMnxN Films Grown by MOCVD

X. L. Yang,Z. T. Chen,L. B. Zhao,W. X. Zhu,C. D. Wang,X. D. Pei,G. Y. Zhang

DOI: https://doi.org/10.1088/0022-3727/41/24/245004

2008-01-01

Abstract:In this paper, we have investigated the structural, optical and magnetic properties of Ga1-xMnxN films grown by MOCVD. The valence band structure was analysed by the x-ray photoelectron spectroscopy (XPS) measurements. A different Fermi level shift behaviour was observed with increasing Mn composition in the GaN. This shift behaviour was attributed to the donor-like defects induced by the Mn doping in the heavily doped samples. The presence of these defects was further confirmed by the calthodoluminescence spectra. The additional peak around 2.0 eV in the heavily doped samples corresponds to the intra-d-shell transitions of Mn2+. This Mn2+ state was formed by trapping the electrons released from the donor-like defects, which is quite consistent with the XPS results. Finally, the magnetic properties were also discussed in combination with the above results.
Optical characterization of GaN:Eu microcrystals grown by the ammonothermal method

Kaihe Xie,Tengkun Li,Guoqiang Ren,Luhua Wang,Wenhao Lu,Liangkun Shen,Hu Zhou,Ke Xu

DOI: https://doi.org/10.1016/j.jallcom.2024.176776

IF: 6.2

2024-10-03

Journal of Alloys and Compounds

Abstract:Eu-doped gallium nitride (GaN:Eu) microcrystals with a wurtzite crystal structure were synthesized using the ammonothermal method. The Eu concentration of GaN:Eu microcrystals estimated by glow discharge mass spectrometry (GDMS) was 5.8 × 10 20 atoms/cm 3 . The morphology of GaN:Eu microcrystals was characterized by scanning electron microscopy (SEM). The exposed crystal faces of GaN:Eu microcrystals were identified as {10−10}, {10−11}, (000−1), and (0001), respectively. The photoluminescence excitation (PLE), photoluminescence (PL) and time-resolved photoluminescence (TRPL) spectra of GaN:Eu microcrystals revealed two luminescent sites of Eu 3+ ions, designated as Eu0 and Eu1. The Eu0 was excited in the range of 300 nm to 420 nm, resulting in the observation of four characteristic luminescence peaks at 599 nm ( 5 D 0 - 7 F 1 ), 620 nm ( 5 D 0 -7F 2 ), 632 nm ( 5 D 1 - 7 F 4 ), and 663 nm ( 5 D 0 - 7 F 3 ). The Eu1 was associated with O 2- ions and emitted light at specific excitation wavelengths. The main luminescence peak of the Eu1 was located at 614 nm, accompanied with characteristic peaks at 578 nm, 591 nm, and 698 nm. In view of the distinct luminescence properties of the Eu0 and the Eu1, the energy transfer processes of two luminescence sites were proposed.

materials science, multidisciplinary,chemistry, physical,metallurgy & metallurgical engineering
Optical, Structural, and Synchrotron X-ray Absorption Studies for GaN Thin Films Grown on Si by Molecular Beam Epitaxy

Zhe Chuan Feng,Jiamin Liu,Deng Xie,Manika Tun Nafisa,Chuanwei Zhang,Lingyu Wan,Beibei Jiang,Hao-Hsiung Lin,Zhi-Ren Qiu,Weijie Lu,Benjamin Klein,Ian T. Ferguson,Shiyuan Liu

DOI: https://doi.org/10.3390/ma17122921

IF: 3.4

2024-06-15

Materials

Abstract:GaN on Si plays an important role in the integration and promotion of GaN-based wide-gap materials with Si-based integrated circuits (IC) technology. A series of GaN film materials were grown on Si (111) substrate using a unique plasma assistant molecular beam epitaxy (PA-MBE) technology and investigated using multiple characterization techniques of Nomarski microscopy (NM), high-resolution X-ray diffraction (HR-XRD), variable angular spectroscopic ellipsometry (VASE), Raman scattering, photoluminescence (PL), and synchrotron radiation (SR) near-edge X-ray absorption fine structure (NEXAFS) spectroscopy. NM confirmed crack-free wurtzite (w-) GaN thin films in a large range of 180–1500 nm. XRD identified the w- single crystalline structure for these GaN films with the orientation along the c-axis in the normal growth direction. An optimized 700 °C growth temperature, plus other corresponding parameters, was obtained for the PA-MBE growth of GaN on Si, exhibiting strong PL emission, narrow/strong Raman phonon modes, XRD w-GaN peaks, and high crystalline perfection. VASE studies identified this set of MBE-grown GaN/Si as having very low Urbach energy of about 18 meV. UV (325 nm)-excited Raman spectra of GaN/Si samples exhibited the GaN E2(low) and E2(high) phonon modes clearly without Raman features from the Si substrate, overcoming the difficulties from visible (532 nm) Raman measurements with strong Si Raman features overwhelming the GaN signals. The combined UV excitation Raman–PL spectra revealed multiple LO phonons spread over the GaN fundamental band edge emission PL band due to the outgoing resonance effect. Calculation of the UV Raman spectra determined the carrier concentrations with excellent values. Angular-dependent NEXAFS on Ga K-edge revealed the significant anisotropy of the conduction band of w-GaN and identified the NEXAFS resonances corresponding to different final states in the hexagonal GaN films on Si. Comparative GaN material properties are investigated in depth.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,metallurgy & metallurgical engineering
Accurate Characterization of Room-Temperature Long Range Magnetic Order in GaN: Mn by Magnetic Force Microscope

YuHao Zhang,ZhiYuan Lin,ZhiTao Chen,YuZhou Qian,XueLin Yang,Ding Li,FaFa Zhang,Tao Dai,BaoShan Han,CunDa Wang,GuoYi Zhang

DOI: https://doi.org/10.1007/s11431-010-4191-1

2010-01-01

Abstract:Room-temperature ferromagnetism with a Curie temperature higher than 380 K was studied in GaN: Mn thin films grown by metal-organic chemical vapor deposition. By etching artificial microstructures on the GaN: Mn layer, strong magnetic responses were observed in the magnetic force microscopy (MFM) measurement, which revealed that the films were independent of dopant particles and clusters. Numerical simulation on the data of atomic force microscope (AFM) and MFM measurements covering the whole microstructure validated the formation of long range magnetic order. This result excluded a variety of controversial origins of room-temperature ferromagnetism in the GaN: Mn and gave a strong evidence of our GaN: Mn as the intrinsic diluted magnetic semiconductor (DMS). The forwarded method for accurate characterization of long range magnetic order could be applied to a wide range of DMS and diluted magnetic oxide (DMO) systems.
Raman scattering probe of anharmonic effects due to temperature and compositional disorder in GaNxAs1−x

H. F. Liu,N. Xiang,S. Tripathy,S. J. Chua

DOI: https://doi.org/10.1063/1.2203393

IF: 2.877

2006-05-15

Journal of Applied Physics

Abstract:Using micro-Raman spectroscopy, we have investigated the vibrational properties of coherently strained GaNxAs1−x alloys grown on GaAs (001) substrates by molecular beam epitaxy. The effect of compositional disorder in GaNxAs1−x alloys has been studied by analyzing the broadening, asymmetry, and line shift of the first-order LO mode and nitrogen-induced localized vibration mode (NLVM). It is found that the line shape and peak shift of GaAs-like LO mode in GaNxAs1−x can be well described by the spatial correlation model. We have also analyzed Raman spectra of GaNxAs1−x alloys in the temperature range of 80–500K. The intensity of GaAs-like LO phonon and NLVM decreases with temperature and the linewidth of both these modes shows substantial broadening at higher temperature. The temperature dependence of phonon linewidth and peak frequency of LO modes are analyzed in terms of anharmonic damping effect induced by thermal and compositional disorders. We have observed that the anharmonicity in GaNxAs1−x is higher than that in GaAs, and increases with the N content in GaNxAs1−x alloys. In addition, both thermal and compositional disorder-induced anharmonicities lead to an appreciable change of the LO phonon lifetime. These results obtained from Raman investigations would lead to a better understanding of the anharmonic effects in dilute nitrides.

physics, applied

Study on Raman scattering spectroscopy of Mn-doped GaN grown by the ammonothermal method

Optical and Structural Properties of Mn-Doped GaN Grown by Metal Organic Chemical Vapour Deposition

Studies on Structural and Magnetic Properties in Mn-Doped GaN

Study on Preparation and Properties of Mn-Doped GaN Powders

Raman Scattering and Ferromagnetism of (ga, Mn)N Films Grown by MOCVD

Raman scattering spectra of GaN grown by MOCVD

Structural And Magnetic Properties In Mn-Doped Gan Grown By Metal Organic Chemical Vapor Deposition

Study on the Raman Scattering Measurements of Mn Ion Implanted Gan

Raman Scattering of GaN and Mg-doped GaN Films Grown by MOCVD

Temperature Dependence of Raman Scattering in GaMnN

Optical and Structural Properties of Mn-Implanted GaN Films

Study on Raman Spectra of GaMnAs

Study on MOCVD-Grown Mg-Doped GaN by Annealing Treatment

Research on the Mn-implanted GaN with Ferromagnetism at Room Temperature

Nitrogen Vacancy Effects on the Ferromagnetism of Mn Doped GaN Films

Growth behavior of ammonothermal GaN crystals grown on non-polar and semi-polar HVPE GaN seeds

Structural, Optical and Magnetic Properties of Ga1−xMnxN Films Grown by MOCVD

Optical characterization of GaN:Eu microcrystals grown by the ammonothermal method

Optical, Structural, and Synchrotron X-ray Absorption Studies for GaN Thin Films Grown on Si by Molecular Beam Epitaxy

Accurate Characterization of Room-Temperature Long Range Magnetic Order in GaN: Mn by Magnetic Force Microscope

Raman scattering probe of anharmonic effects due to temperature and compositional disorder in GaNxAs1−x