Resonant Raman Scattering in Boron-Implanted GaN
Yi Peng,Wenwang Wei,Muhammad Farooq Saleem,Kai Xiao,Yanlian Yang,Yufei Yang,Yukun Wang,Wenhong Sun
DOI: https://doi.org/10.3390/mi13020240
IF: 3.4
2022-01-31
Micromachines
Abstract:A small Boron ion (B-ion) dose of 5 × 1014 cm−2 was implanted in a GaN epilayer at an energy of 50 keV, and the sample was subjected to high-temperature rapid thermal annealing (RTA). The resonant Raman spectrum (RRS) showed a strong characteristic of a photoluminescence (PL) emission peak associated with GaN before B-ion implantation and RTA treatment. The PL signal decreased significantly after the B-ion implantation and RTA treatment. The analysis of temperature-dependent Raman spectroscopy data indicated the activation of two transitions in B-ion-implanted GaN in different temperature ranges with activation energies of 66 and 116 meV. The transition energies were estimated in the range of 3.357–3.449 eV through calculations. This paper introduces a calculation method that can be used to calculate the activation and transition energies, and it further highlights the strong influence of B-ion implantation on the luminesce of GaN.
chemistry, analytical,nanoscience & nanotechnology,instruments & instrumentation,physics, applied