Abstract:A range of high quality Ga1-xMnxN layers have been grown by molecular beam epitaxy with manganese concentration 0.2 < x < 10%, having the x value tuned by changing the growth temperature (Tg) between 700 and 590 °C, respectively. We present a systematic structural and microstructure characterization by atomic force microscopy, secondary ion mass spectrometry, transmission electron microscopy, powder-like and high resolution X-ray diffraction, which do not reveal any crystallographic phase separation, clusters or nanocrystals, even at the lowest Tg. Our synchrotron based X-ray absorption near-edge spectroscopy supported by density functional theory modelling and superconducting quantum interference device magnetometry results point to the predominantly +3 configuration of Mn in GaN and thus the ferromagnetic phase has been observed in layers with x > 5% at 3 < T < 10 K. The main detrimental effect of Tg reduced to 590 °C is formation of flat hillocks, which increase the surface root-mean-square roughness, but only to mere 3.3 nm. Fine substrates surface temperature mapping has shown that the magnitudes of both x and Curie temperature (Tc) correlate with local Tg. It has been found that a typical 10 °C variation of Tg across 1 inch substrate can lead to 40% dispersion of Tc. The established here strong sensitivity of Tc on Tg turns magnetic measurements into a very efficient tool providing additional information on local Tg, an indispensable piece of information for growth mastering of ternary compounds in which metal species differ in almost every aspect of their growth related parameters determining the kinetics of the growth. We also show that the precise determination of Tc by two different methods, each sensitive to different moments of Tc distribution, may serve as a tool for quantification of spin homogeneity within the material.

Temperature Dependence Of The Optical Properties In Gamnn

Optical Properties of Gamnn Films Grown by Metal-Organic Chemical Vapor Deposition

Temperature-dependent Optical Properties of Pb1−xMnxSe Films Epitaxially Grown on Zn0.04Cd0.96Te Substrates

Temperature Dependence Of The Fundamental Band Gap Of Inn

Optical and Structural Properties of Mn-Implanted GaN Films

Optical and Structural Properties of Mn-Doped GaN Grown by Metal Organic Chemical Vapour Deposition

The temperature dependence of optical properties of InGaN alloys

Impact of substrate temperature on magnetic properties of plasma-assisted molecular beam epitaxy grown (Ga,Mn)N

Research on the Mn-implanted GaN with Ferromagnetism at Room Temperature

Different Temperature Dependence of Carrier Transport Properties Between Alxga1-Xn/Inyga1-Yn/Gan and Alxga1-Xn/Gan Heterostructures

Optical Characteristics and Magnetism of Mn+-Ion-Implanted MOCVD-GaN Film

Temperature dependence of strain in A1(X)Ga(1-X)N/GaN heterostructures

Temperature Dependence Of Magneto-Optical Properties Of Zn1-Xmnxse

Temperature Dependence of Electronic Band Transition in Mn-Doped Sno2 Nanocrystalline Films Determined by Ultraviolet-Near-Infrared Transmittance Spectra

Growth of and optical emission from GaMnAs thin films grown by molecular beam epitaxy

Optical properties of Mn4+ ions in GaN:Mn codoped with Mg acceptors

Temperature Dependent Photon Emission Spectra of Free Excitons in Phonon Field of GaN

Optical property studies of GaN films grown by MOCVD

Effect of Temperature on Longitudinal Optical Phonon-Assisted Exciton Luminescence in Heteroepitaxial GaN Layer

Effects of Ni Substitution on Magnetism and Thermal Expansion of Antiperovskite Mn3Ga1-xNixN (0 ≤ X ≤ 1.0)

Structural, Optical and Magnetic Properties of Ga1−xMnxN Films Grown by MOCVD