Abstract:Luminescence properties of MOVPE grown AlGaAs epilayer on conventional GaAs (100) substrates have been unravelled through temperature dependent photoluminescence (PL) spectroscopy. A shrinkage of ∼33.3 meV in the excitonic energy as a result of the presence of the natural superlattice ordering has been reported. The temperature dependence of the excitonic energy has been investigated using two independent models, among which the two-oscillator model is found to give the best fit to the experimental data throughout the operating temperature range (4–150 K). The extracted phonon energies come out to be higher for the as-grown (ordered) sample relative to the annealed (disordered) sample which is a consequence of confinement due to the periodic modulation. From the analysis of the thermal quenching of the PL signal related to the excitonic transition using the modified Arrhenius equation, we have found that the thermalization of the carriers involve two non-radiative channels for the material. Among them, the one related to the defects, impurity, interface quality of the material is dominant at low temperature while the other relating the thermal escape of excitons from its bound state becomes dominant at high temperature. The thermal activation energies possess higher values for the as-grown sample which could be ascribed to the confinement of the carriers in the natural superlattice layers. These analyses gave a clear understanding of the role of electron-phonon interaction in the thermalization of carriers which results in band-gap shrinkage, sharp linewidth and enhanced PL signal for the natural superlattice sample due to localization of the carriers in the periodic structure in comparison to the annealed disordered one. The study revealed a better temperature stability of the luminescence of the material with periodic superlattice ordering.

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Coupled Brillouin-Raman Study of Direct and Folded Acoustic Modes in Gaas-Alas Superlattices

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Phonon Modes And Raman-Scattering In Gaas/Ga1-Xalxas

Theory on the Optical-Phonon Raman Scattering in GaAs/AlAs Heterostructures

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Effect of spontaneous superlattice ordering on the luminescence properties of the MOVPE grown AlGaAs/GaAs (100) heterostructure

Optical Study of Electronic States in Gaasn

Polar optical phonons at $GaAs|Al_{(x)}Ga_{(1-x)}As$ interfaces: influence of the concentration of Al

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Optical properties and band lineup in GaNxAs1-x/GaAs single quantum wells

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Optical properties of delta-doped GaAs and GaAs/Al0.1Ga0.9As superlattices

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Photoluminescence Characterization of Te-Doped Gasb/Alsb Superlattices

Photoluminescence Properties of a GaN0.015As0.985/GaAs Single Quantum Well under Short Pulse Excitation

Band Offset in (Ga,In)As/Ga(As,Sb) Heterostructures